- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 80
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 200V | 50ns，30ns | 350mA，650mA | ||
|
|
|
ON Semiconductor |
6,038
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 200V | 50ns，30ns | 350mA，650mA | ||
|
|
|
ON Semiconductor |
6,038
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 200V | 50ns，30ns | 350mA，650mA | ||
|
|
|
Renesas Electronics America Inc. |
9,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Tape & Reel (TR) | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
9,825
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Cut Tape (CT) | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
9,825
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Tape & Reel (TR) | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
3,101
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Cut Tape (CT) | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
3,101
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER 3PHASE 80V 0.5A 24SOIC
|
Tape & Reel (TR) | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295"，7.50mm Width) | 24-SOIC | Surface Mount | Inverting，Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 500mA，500mA | ||
|
|
|
Renesas Electronics America Inc. |
3,781
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3PHASE 80V 0.5A 24SOIC
|
Cut Tape (CT) | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295"，7.50mm Width) | 24-SOIC | Surface Mount | Inverting，Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 500mA，500mA | ||
|
|
|
Renesas Electronics America Inc. |
3,781
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3PHASE 80V 0.5A 24SOIC
|
- | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295"，7.50mm Width) | 24-SOIC | Surface Mount | Inverting，Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 500mA，500mA | ||
|
|
|
Renesas Electronics America Inc. |
1,614
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20DIP
|
Tube | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 2.6A，2.4A | ||
|
|
|
ON Semiconductor |
24,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 350mA，650mA | ||
|
|
|
ON Semiconductor |
24,216
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 350mA，650mA | ||
|
|
|
ON Semiconductor |
24,216
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 350mA，650mA | ||
|
|
|
Renesas Electronics America Inc. |
918
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET H-BRIDGE 16SOIC
|
Tube | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1.4A，1.3A | ||
|
|
|
Renesas Electronics America Inc. |
672
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET H-BRIDGE 16DIP
|
Tube | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1.4A，1.3A | ||
|
|
|
Renesas Electronics America Inc. |
2,362
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20SOIC
|
Tube | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
1,263
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20DIP
|
Tube | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 2.6A，2.4A |
