- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 146
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8SOIC
|
Tape & Reel (TR) | EiceDriver | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8-60 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
4,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8SOIC
|
Cut Tape (CT) | EiceDriver | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8-60 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
4,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8SOIC
|
- | EiceDriver | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8-60 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
ON Semiconductor |
5,844
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
Tube | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 300V | 65ns,25ns | - | 450mA,450mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8DSO
|
Tape & Reel (TR) | EiceDriver | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A | ||||
Infineon Technologies |
4,909
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
Cut Tape (CT) | EiceDriver | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A | ||||
Infineon Technologies |
4,909
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
- | EiceDriver | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
DRIVER IC
|
Tape & Reel (TR) | EiceDriver | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel,P-Channel MOSFET | 84V | 6.5ns,4.5ns | - | 4A,8A | ||||
Infineon Technologies |
2,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
Cut Tape (CT) | EiceDriver | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel,P-Channel MOSFET | 84V | 6.5ns,4.5ns | - | 4A,8A | ||||
Infineon Technologies |
2,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
- | EiceDriver | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel,P-Channel MOSFET | 84V | 6.5ns,4.5ns | - | 4A,8A | ||||
Infineon Technologies |
4,000
|
3 jours |
-
|
MOQ: 4000 MPQ: 1
|
IC GATE DRIVER 8WSON
|
Tape & Reel (TR) | EiceDriver | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
6,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8WSON
|
Cut Tape (CT) | EiceDriver | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
6,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8WSON
|
- | EiceDriver | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
4,000
|
3 jours |
-
|
MOQ: 4000 MPQ: 1
|
IC GATE DRIVER 8WSON
|
Tape & Reel (TR) | EiceDriver | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
4,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8WSON
|
Cut Tape (CT) | EiceDriver | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
Infineon Technologies |
4,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8WSON
|
- | EiceDriver | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns,4.5ns | - | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 300V | 65ns,25ns | - | 450mA,450mA | ||||
ON Semiconductor |
2,271
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 300V | 65ns,25ns | - | 450mA,450mA | ||||
ON Semiconductor |
2,271
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
- | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 300V | 65ns,25ns | - | 450mA,450mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
Tape & Reel (TR) | EiceDriver | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 6.5ns,4.5ns | - | 4A,8A |