- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 12
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
pSemi |
500
|
3 jours |
-
|
MOQ: 500 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
Tape & Reel (TR) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | - | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 2.5ns,2.5ns | - | 2A,4A | ||||
pSemi |
615
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
Cut Tape (CT) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | - | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 2.5ns,2.5ns | - | 2A,4A | ||||
pSemi |
615
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
- | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | - | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 2.5ns,2.5ns | - | 2A,4A | ||||
pSemi |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
HIGH SPEED FET DRIVER WITH SYNC
|
Tape & Reel (TR) | - | - | - | Die | - | - | - | - | - | - | - | - | - | ||||
pSemi |
461
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH SPEED FET DRIVER WITH SYNC
|
Cut Tape (CT) | - | - | - | Die | - | - | - | - | - | - | - | - | - | ||||
pSemi |
461
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH SPEED FET DRIVER WITH SYNC
|
- | - | - | - | Die | - | - | - | - | - | - | - | - | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 3-PH 600V DIE
|
Bulk | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | Chip | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 3-PH 600V DIE
|
Bulk | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | Chip | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 3-PH 600V DIE
|
Bulk | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | Chip | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 3-PH 600V DIE
|
Bulk | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | Chip | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 20 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A DIE
|
Tube | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | Die | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC POWER MANAGEMENT
|
Bulk | - | 4.5 V ~ 18 V | 0°C ~ 70°C | Die | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A |