- Packaging：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Supplier Device Package：
-
- Input Type：
-
- Channel Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 23
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRVR N-CH DUAL 16QFN
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | 0°C ~ 85°C (TA) | 16-QFN (3x3) | Non-Inverting | Synchronous | 4 | N-Channel MOSFET | - | 15ns，12ns | - | - | ||
|
|
|
Infineon Technologies |
1,229
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR N-CH DUAL 16QFN
|
Cut Tape (CT) | 4.5 V ~ 5.5 V | 0°C ~ 85°C (TA) | 16-QFN (3x3) | Non-Inverting | Synchronous | 4 | N-Channel MOSFET | - | 15ns，12ns | - | - | ||
|
|
|
Infineon Technologies |
1,229
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR N-CH DUAL 16QFN
|
- | 4.5 V ~ 5.5 V | 0°C ~ 85°C (TA) | 16-QFN (3x3) | Non-Inverting | Synchronous | 4 | N-Channel MOSFET | - | 15ns，12ns | - | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16MLPQ
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-MLPQ (4x4) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 368 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16MLPQ
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-MLPQ (4x4) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC MOSFET DRVR N-CH DUAL 16QFN
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | 0°C ~ 150°C (TJ) | 16-QFN (3x3) | Non-Inverting | Synchronous | 4 | N-Channel MOSFET | - | 15ns，12ns | 0.7V，1.3V | - | ||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16VQFN
|
Tape & Reel (TR) | 5 V ~ 10 V | -20°C ~ 125°C (TJ) | 16-QFN (3x3) | Inverting，Non-Inverting | Independent | 4 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.3V，1.7V | 2A，2A | |||
|
|
Microchip Technology |
3,289
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16VQFN
|
Cut Tape (CT) | 5 V ~ 10 V | -20°C ~ 125°C (TJ) | 16-QFN (3x3) | Inverting，Non-Inverting | Independent | 4 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.3V，1.7V | 2A，2A | |||
|
|
Microchip Technology |
3,289
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16VQFN
|
- | 5 V ~ 10 V | -20°C ~ 125°C (TJ) | 16-QFN (3x3) | Inverting，Non-Inverting | Independent | 4 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.3V，1.7V | 2A，2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR 85V FULL BRIDGE
|
Tape & Reel (TR) | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-QFN (4x4) | Inverting，Non-Inverting | Independent | 4 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
327
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V FULL BRIDGE
|
Cut Tape (CT) | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-QFN (4x4) | Inverting，Non-Inverting | Independent | 4 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR 28V HALF 16QFN
|
Tape & Reel (TR) | 4.5 V ~ 28 V | -40°C ~ 125°C (TJ) | 16-VQFN (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | 15ns，13.5ns | 0.65V，1.4V | - | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 28V HALF 16QFN
|
Cut Tape (CT) | 4.5 V ~ 28 V | -40°C ~ 125°C (TJ) | 16-VQFN (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | 15ns，13.5ns | 0.65V，1.4V | - | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 28V HALF 16QFN
|
- | 4.5 V ~ 28 V | -40°C ~ 125°C (TJ) | 16-VQFN (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | 15ns，13.5ns | 0.65V，1.4V | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR DUAL 5V 16QFN
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 16-QFN (2.5x3.5) | Non-Inverting | Synchronous | 4 | N-Channel，P-Channel MOSFET | 35V | 16ns，11ns | 0.7V，3.4V | - | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC MOSFET DVR 28V HALF 16QFN
|
Tape & Reel (TR) | 4.5 V ~ 28 V | -40°C ~ 125°C (TJ) | 16-VQFN (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | 15ns，13.5ns | 0.65V，1.4V | - | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 28V HALF 16QFN
|
Cut Tape (CT) | 4.5 V ~ 28 V | -40°C ~ 125°C (TJ) | 16-VQFN (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | 15ns，13.5ns | 0.65V，1.4V | - | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 28V HALF 16QFN
|
- | 4.5 V ~ 28 V | -40°C ~ 125°C (TJ) | 16-VQFN (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | 15ns，13.5ns | 0.65V，1.4V | - | |||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DRIVER 16MLPQ
|
Tape & Reel (TR) | 4.5 V ~ 7 V | - | 16-MLPQ (3x3) | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | - | - | - | -，4A | ||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 28V HALF 16QFN
|
Cut Tape (CT) | 4.5 V ~ 28 V | -40°C ~ 125°C (TJ) | 16-VQFN (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | 15ns，13.5ns | 0.65V，1.4V | - |
