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Découvrez les produits 25
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
BD2270HFV-TR
ROHM Semiconductor
18,000
3 jours
-
MOQ: 3000  MPQ: 1
IC MOSFET CTLR LOAD SW 5-HVSOF
Tape & Reel (TR) - 2.7 V ~ 5.5 V -25°C ~ 85°C (TA) SOT-665 HVSOF5 Non-Inverting Single High-Side 1 N-Channel MOSFET - 130μs,18μs - -
BD2270HFV-TR
ROHM Semiconductor
19,096
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET CTLR LOAD SW 5-HVSOF
Cut Tape (CT) - 2.7 V ~ 5.5 V -25°C ~ 85°C (TA) SOT-665 HVSOF5 Non-Inverting Single High-Side 1 N-Channel MOSFET - 130μs,18μs - -
BD2270HFV-TR
ROHM Semiconductor
19,096
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET CTLR LOAD SW 5-HVSOF
- - 2.7 V ~ 5.5 V -25°C ~ 85°C (TA) SOT-665 HVSOF5 Non-Inverting Single High-Side 1 N-Channel MOSFET - 130μs,18μs - -
BD16952EFV-ME2
ROHM Semiconductor
6,000
3 jours
-
MOQ: 2000  MPQ: 1
2CH HALF-BRIDGE GATE DRIVER
Tape & Reel (TR) Automotive,AEC-Q100 3 V ~ 5.5 V -40°C ~ 150°C (TJ) 24-VSSOP (0.220",5.60mm Width) Exposed Pad 24-HTSSOP-B Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET - - - -
BD16952EFV-ME2
ROHM Semiconductor
6,000
3 jours
-
MOQ: 1  MPQ: 1
2CH HALF-BRIDGE GATE DRIVER
Cut Tape (CT) Automotive,AEC-Q100 3 V ~ 5.5 V -40°C ~ 150°C (TJ) 24-VSSOP (0.220",5.60mm Width) Exposed Pad 24-HTSSOP-B Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET - - - -
BD16952EFV-ME2
ROHM Semiconductor
6,000
3 jours
-
MOQ: 1  MPQ: 1
2CH HALF-BRIDGE GATE DRIVER
- Automotive,AEC-Q100 3 V ~ 5.5 V -40°C ~ 150°C (TJ) 24-VSSOP (0.220",5.60mm Width) Exposed Pad 24-HTSSOP-B Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET - - - -
BD2270HFV-LBTR
ROHM Semiconductor
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET CTLR 5-HVSOF
Tape & Reel (TR) - 2.7 V ~ 5.5 V -25°C ~ 85°C (TA) SOT-665 HVSOF5 Non-Inverting Single High-Side 1 N-Channel MOSFET - 130μs,18μs - -
BD2270HFV-LBTR
ROHM Semiconductor
2,522
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET CTLR 5-HVSOF
Cut Tape (CT) - 2.7 V ~ 5.5 V -25°C ~ 85°C (TA) SOT-665 HVSOF5 Non-Inverting Single High-Side 1 N-Channel MOSFET - 130μs,18μs - -
BD2270HFV-LBTR
ROHM Semiconductor
2,522
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET CTLR 5-HVSOF
- - 2.7 V ~ 5.5 V -25°C ~ 85°C (TA) SOT-665 HVSOF5 Non-Inverting Single High-Side 1 N-Channel MOSFET - 130μs,18μs - -
BS2103F-E2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SOP
Tape & Reel (TR) - 10 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.173",4.40mm Width) 8-SOP Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 200ns,100ns 1V,2.6V 60mA,130mA
BS2103F-E2
ROHM Semiconductor
876
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SOP
Cut Tape (CT) - 10 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.173",4.40mm Width) 8-SOP Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 200ns,100ns 1V,2.6V 60mA,130mA
BS2103F-E2
ROHM Semiconductor
876
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SOP
- - 10 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.173",4.40mm Width) 8-SOP Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 200ns,100ns 1V,2.6V 60mA,130mA
BD6562FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR IGBT/MOSFET 2CH 16SSOP
Tape & Reel (TR) - 10 V ~ 25 V -25°C ~ 150°C (TJ) 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA
BD6562FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR IGBT/MOSFET 2CH 16SSOP
Cut Tape (CT) - 10 V ~ 25 V -25°C ~ 150°C (TJ) 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA
BD6562FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR IGBT/MOSFET 2CH 16SSOP
- - 10 V ~ 25 V -25°C ~ 150°C (TJ) 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA
BD6563FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR IGBT/MOSFET 3CH 16SSOP
Tape & Reel (TR) - 10 V ~ 25 V -25°C ~ 150°C (TJ) 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Non-Inverting Independent Low-Side 3 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA
BD6563FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR IGBT/MOSFET 3CH 16SSOP
Cut Tape (CT) - 10 V ~ 25 V -25°C ~ 150°C (TJ) 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Non-Inverting Independent Low-Side 3 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA
BD6563FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR IGBT/MOSFET 3CH 16SSOP
- - 10 V ~ 25 V -25°C ~ 150°C (TJ) 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Non-Inverting Independent Low-Side 3 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA
BS2100F-E2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR IGBT/MOSFET
Tape & Reel (TR) - 10 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.173",4.40mm Width) 8-SOP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 600V 200ns,100ns 1V,2.6V 60mA,130mA
BS2100F-E2
ROHM Semiconductor
2,188
3 jours
-
MOQ: 1  MPQ: 1
IC DVR IGBT/MOSFET
Cut Tape (CT) - 10 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.173",4.40mm Width) 8-SOP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 600V 200ns,100ns 1V,2.6V 60mA,130mA