- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 9
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ROHM Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOP
|
Tape & Reel (TR) | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 1V，2.6V | 60mA，130mA | ||
|
|
|
ROHM Semiconductor |
876
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOP
|
Cut Tape (CT) | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 1V，2.6V | 60mA，130mA | ||
|
|
|
ROHM Semiconductor |
876
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOP
|
- | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 1V，2.6V | 60mA，130mA | ||
|
|
ROHM Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR IGBT/MOSFET
|
Tape & Reel (TR) | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 200ns，100ns | 1V，2.6V | 60mA，130mA | |||
|
|
ROHM Semiconductor |
2,188
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR IGBT/MOSFET
|
Cut Tape (CT) | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 200ns，100ns | 1V，2.6V | 60mA，130mA | |||
|
|
ROHM Semiconductor |
2,188
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR IGBT/MOSFET
|
- | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 200ns，100ns | 1V，2.6V | 60mA，130mA | |||
|
|
ROHM Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
600V HIGH VOLTAGE HIGH & LOW-SID
|
Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
ROHM Semiconductor |
21
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
600V HIGH VOLTAGE HIGH & LOW-SID
|
Cut Tape (CT) | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
ROHM Semiconductor |
21
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
600V HIGH VOLTAGE HIGH & LOW-SID
|
- | - | - | - | - | - | - | - | - | - | - | - |
