Découvrez les produits 7
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
2EDL23I06PJXUMA1
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 14DSO
Tape & Reel (TR) EiceDriver 10 V ~ 25 V Non-Inverting Independent Half-Bridge 2 IGBT 600V 48ns,37ns 1.1V,1.7V 2.3A,2.3A
2EDL23I06PJXUMA1
Infineon Technologies
4,972
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 14DSO
Cut Tape (CT) EiceDriver 10 V ~ 25 V Non-Inverting Independent Half-Bridge 2 IGBT 600V 48ns,37ns 1.1V,1.7V 2.3A,2.3A
2EDL23I06PJXUMA1
Infineon Technologies
4,972
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 14DSO
- EiceDriver 10 V ~ 25 V Non-Inverting Independent Half-Bridge 2 IGBT 600V 48ns,37ns 1.1V,1.7V 2.3A,2.3A
1EBN1001AEXUMA1
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC IGBT DVR 1200V DSO14
Tape & Reel (TR) Automotive,AEC-Q100,EiceDriver 13 V ~ 18 V - Single High-Side or Low-Side 1 IGBT,N-Channel,P-Channel MOSFET 1200V 50ns,90ns 1.5V,3.5V -
2EDL05I06PJXUMA1
Infineon Technologies
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DVR BRDG 60V .25A DSO14
Tape & Reel (TR) EiceDriver 10 V ~ 20 V Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET 600V 48ns,24ns 1.1V,1.7V 250mA,500mA
2EDL05I06PJXUMA1
Infineon Technologies
7,500
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR BRDG 60V .25A DSO14
Cut Tape (CT) EiceDriver 10 V ~ 20 V Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET 600V 48ns,24ns 1.1V,1.7V 250mA,500mA
2EDL05I06PJXUMA1
Infineon Technologies
7,500
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR BRDG 60V .25A DSO14
- EiceDriver 10 V ~ 20 V Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET 600V 48ns,24ns 1.1V,1.7V 250mA,500mA