- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 17
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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-
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MOQ: 25 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 14-DIP
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3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC DRIVER HIGH/LOW SID 14DIP
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3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 175 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 14DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 14DIP
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3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1500 MPQ: 1
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IC GATE DVR MONO HI/LO 14DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | 3A，3A | ||
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Microchip Technology |
466
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR QUAD AND 14DIP
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4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
316
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR AND/INV 14DIP
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4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
123
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR QUAD AND 14DIP
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
217
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 14DIP
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
146
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD NAND 14DIP
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4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC MOSFET DVR QUAD NAND 14DIP
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4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC PWR MOSFET DRIVER N-CH 14-DIP
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10 V ~ 15 V | 0°C ~ 125°C (TJ) | 14-DIP (0.300"，7.62mm) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC PWR MOSFET DRIVER N-CH 14-DIP
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10 V ~ 15 V | -40°C ~ 125°C (TJ) | 14-DIP (0.300"，7.62mm) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC QUAD CMOS DR AND/INV SW 14DIP
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- | - | 14-DIP (0.300"，7.62mm) | - | - | - | 4 | - | - | - | - | - | |||
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IXYS |
Enquête
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- |
-
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MOQ: 400 MPQ: 1
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IC DRVR HALF BRIDGE 600MA 14-PDI
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10 V ~ 35 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 28ns，18ns | 2.4V，2.7V | 600mA，600mA |
