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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 7,777
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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pSemi |
500
|
3 jours |
-
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MOQ: 500 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
Tape & Reel (TR) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | Surface Mount | - | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 2.5ns，2.5ns | - | 2A，4A | ||
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|
pSemi |
615
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
Cut Tape (CT) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | Surface Mount | - | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 2.5ns，2.5ns | - | 2A，4A | ||
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|
|
pSemi |
615
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
- | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | Surface Mount | - | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 2.5ns，2.5ns | - | 2A，4A | ||
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|
|
Renesas Electronics America Inc. |
4,296
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL PWR 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Infineon Technologies |
2,399
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC HIGH SIDE DRIVER SGL 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
1,312
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH SIDE 8SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Maxim Integrated |
363
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRV DUAL NONINV 8-SOIC
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Texas Instruments |
9,183
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-SOIC
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Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Texas Instruments |
3,503
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR SYNC 4.5A HS 8SOIC
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Tube | - | 4 V ~ 6.85 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 17ns，12ns | - | 3A，4.5A | ||
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Texas Instruments |
502
|
3 jours |
-
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MOQ: 250 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR 10WSON
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Tape & Reel (TR) | - | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 7.8ns，6ns | 1.2V，2.55V | 4A，4A | ||
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Texas Instruments |
1,587
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HALF-BRIDGE GATE DRVR 10WSON
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Cut Tape (CT) | - | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 7.8ns，6ns | 1.2V，2.55V | 4A，4A | ||
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Texas Instruments |
1,587
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR 10WSON
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- | - | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 7.8ns，6ns | 1.2V，2.55V | 4A，4A | ||
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Maxim Integrated |
628
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
351
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
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Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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|
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Infineon Technologies |
2,602
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 22ns，18ns | 0.8V，2.5V | 4A，4A | ||
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Infineon Technologies |
2,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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|
|
Texas Instruments |
502
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
Tube | - | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 1.2V，2.7V | 4A，4A | ||
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|
|
Infineon Technologies |
2,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2.5A，2.5A | ||
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|
|
IXYS Integrated Circuits Division |
2,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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|
|
Infineon Technologies |
2,122
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 8.3V，12.6V | 250mA，500mA |
