- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Gate Type:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 54
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
12,190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
12,190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
5,487
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
5,487
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
6,376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 600V 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
11,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
4,355
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
11,996
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
11,996
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
245
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 600V 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
2,480
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
2,480
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.6V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
2,376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.6V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
2,376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.6V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 0.6V,2.5V | 290mA,600mA |