Découvrez les produits 54
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IRS2308STRPBF
Infineon Technologies
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR HALF BRIDGE 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
IRS2308STRPBF
Infineon Technologies
12,190
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRIDGE 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
IRS2308STRPBF
Infineon Technologies
12,190
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRIDGE 8-SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
IRS2109STRPBF
Infineon Technologies
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR HALF BRIDGE 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
IRS2109STRPBF
Infineon Technologies
5,487
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRIDGE 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
IRS2109STRPBF
Infineon Technologies
5,487
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRIDGE 8-SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
IRS2308SPBF
Infineon Technologies
6,376
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF-BRIDGE 600V 8SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
IRS2106SPBF
Infineon Technologies
11,772
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
IRS2109SPBF
Infineon Technologies
4,355
3 jours
-
MOQ: 1  MPQ: 1
IC HALF BRIDGE DRIVER 8-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
IRS2108STRPBF
Infineon Technologies
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF-BRIDGE 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
IRS2108STRPBF
Infineon Technologies
11,996
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF-BRIDGE 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
IRS2108STRPBF
Infineon Technologies
11,996
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF-BRIDGE 8-SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
IRS2308PBF
Infineon Technologies
245
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF-BRIDGE 600V 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
DGD2103S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
DGD2103S8-13
Diodes Incorporated
2,480
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
DGD2103S8-13
Diodes Incorporated
2,480
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 290mA,600mA
DGD2108S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.6V,2.5V 290mA,600mA
DGD2108S8-13
Diodes Incorporated
2,376
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.6V,2.5V 290mA,600mA
DGD2108S8-13
Diodes Incorporated
2,376
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.6V,2.5V 290mA,600mA
DGD2106S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 0.6V,2.5V 290mA,600mA