- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 122
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
Tape & Reel (TR) | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-DSO | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | 600V | 48ns，37ns | 1.1V，1.7V | 1.8A，2.3A | ||
|
|
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Infineon Technologies |
9,815
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
Cut Tape (CT) | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-DSO | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | 600V | 48ns，37ns | 1.1V，1.7V | 1.8A，2.3A | ||
|
|
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Infineon Technologies |
9,815
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
- | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-DSO | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | 600V | 48ns，37ns | 1.1V，1.7V | 1.8A，2.3A | ||
|
|
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
Tape & Reel (TR) | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | PG-DSO-14 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns，37ns | 1.1V，1.7V | 2.3A，2.3A | ||
|
|
|
Infineon Technologies |
4,972
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
Cut Tape (CT) | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | PG-DSO-14 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns，37ns | 1.1V，1.7V | 2.3A，2.3A | ||
|
|
|
Infineon Technologies |
4,972
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
- | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | PG-DSO-14 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns，37ns | 1.1V，1.7V | 2.3A，2.3A | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-DSO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 48ns，24ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
7,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-DSO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 48ns，24ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
7,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-DSO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 48ns，24ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
|
|
|
Infineon Technologies |
4,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
|
|
|
Infineon Technologies |
4,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8SOIC
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
|
|
|
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns，24ns | 1.1V，1.7V | 500mA，500mA | ||
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|
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Infineon Technologies |
10,174
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns，24ns | 1.1V，1.7V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
10,174
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns，24ns | 1.1V，1.7V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8DSO
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | 1.2V，1.9V | 5A，5A | ||
|
|
|
Infineon Technologies |
4,909
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | 1.2V，1.9V | 5A，5A | ||
|
|
|
Infineon Technologies |
4,909
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | 1.2V，1.9V | 5A，5A | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR BRDG 60V .25A DSO14
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | PG-DSO-14 | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | 600V | 48ns，24ns | 1.1V，1.7V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR BRDG 60V .25A DSO14
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | PG-DSO-14 | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | 600V | 48ns，24ns | 1.1V，1.7V | 250mA，500mA |
