- Series:
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- Voltage - Supply:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 47
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Maxim Integrated |
1,316
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
Tube | - | 4 V ~ 14 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Tape & Reel (TR) | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 2V,4.25V | 4A,4A | ||||
Maxim Integrated |
5,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Cut Tape (CT) | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 2V,4.25V | 4A,4A | ||||
Maxim Integrated |
5,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
- | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 2V,4.25V | 4A,4A | ||||
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Tape & Reel (TR) | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting,Non-Inverting | Independent | Low-Side | IGBT,SiC MOSFET | - | 2V,4.25V | 4A,4A | ||||
Maxim Integrated |
4,800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Cut Tape (CT) | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting,Non-Inverting | Independent | Low-Side | IGBT,SiC MOSFET | - | 2V,4.25V | 4A,4A | ||||
Maxim Integrated |
4,800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
- | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting,Non-Inverting | Independent | Low-Side | IGBT,SiC MOSFET | - | 2V,4.25V | 4A,4A | ||||
Maxim Integrated |
2,180
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Strip | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Tape & Reel (TR) | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
1,390
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Cut Tape (CT) | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
1,390
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
- | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Tape & Reel (TR) | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
1,287
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Cut Tape (CT) | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
1,287
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
- | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
881
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
Tube | - | 4 V ~ 14 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
413
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
Tube | - | 4 V ~ 14 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-uMax-EP | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Strip | - | 4 V ~ 14 V | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 2V,4.25V | 4A,4A | ||||
Maxim Integrated |
390
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
Tube | - | 4 V ~ 14 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-uMax-EP | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 2V,4.25V | 4A,4A | ||||
Maxim Integrated |
288
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
Tube | - | 4 V ~ 14 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
118
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
Tube | - | 4 V ~ 14 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-uMax-EP | Inverting,Non-Inverting | Independent | Low-Side | IGBT,SiC MOSFET | - | 2V,4.25V | 4A,4A |