Découvrez les produits 47
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX17601ASA+
Maxim Integrated
1,316
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8SOIC
Tube - 4 V ~ 14 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Low-Side N-Channel MOSFET - 0.8V,2.1V 4A,4A
MAX17603ATA+T
Maxim Integrated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Tape & Reel (TR) - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Inverting Independent Low-Side N-Channel MOSFET - 2V,4.25V 4A,4A
MAX17603ATA+T
Maxim Integrated
5,000
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Cut Tape (CT) - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Inverting Independent Low-Side N-Channel MOSFET - 2V,4.25V 4A,4A
MAX17603ATA+T
Maxim Integrated
5,000
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
- - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Inverting Independent Low-Side N-Channel MOSFET - 2V,4.25V 4A,4A
MAX17605ATA+T
Maxim Integrated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Tape & Reel (TR) - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side IGBT,SiC MOSFET - 2V,4.25V 4A,4A
MAX17605ATA+T
Maxim Integrated
4,800
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Cut Tape (CT) - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side IGBT,SiC MOSFET - 2V,4.25V 4A,4A
MAX17605ATA+T
Maxim Integrated
4,800
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
- - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side IGBT,SiC MOSFET - 2V,4.25V 4A,4A
MAX17602ATA+
Maxim Integrated
2,180
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Strip - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN (3x3) Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 0.8V,2.1V 4A,4A
MAX17601ATA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Tape & Reel (TR) - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN (3x3) Non-Inverting Independent Low-Side N-Channel MOSFET - 0.8V,2.1V 4A,4A
MAX17601ATA+T
Maxim Integrated
1,390
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Cut Tape (CT) - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN (3x3) Non-Inverting Independent Low-Side N-Channel MOSFET - 0.8V,2.1V 4A,4A
MAX17601ATA+T
Maxim Integrated
1,390
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
- - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN (3x3) Non-Inverting Independent Low-Side N-Channel MOSFET - 0.8V,2.1V 4A,4A
MAX17600ATA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Tape & Reel (TR) - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Inverting Independent Low-Side N-Channel MOSFET - 0.8V,2.1V 4A,4A
MAX17600ATA+T
Maxim Integrated
1,287
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Cut Tape (CT) - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Inverting Independent Low-Side N-Channel MOSFET - 0.8V,2.1V 4A,4A
MAX17600ATA+T
Maxim Integrated
1,287
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
- - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Inverting Independent Low-Side N-Channel MOSFET - 0.8V,2.1V 4A,4A
MAX17600ASA+
Maxim Integrated
881
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8SOIC
Tube - 4 V ~ 14 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Independent Low-Side N-Channel MOSFET - 0.8V,2.1V 4A,4A
MAX17600AUA+
Maxim Integrated
413
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8UMAX
Tube - 4 V ~ 14 V 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Inverting Independent Low-Side N-Channel MOSFET - 0.8V,2.1V 4A,4A
MAX17604ATA+T
Maxim Integrated
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Strip - 4 V ~ 14 V 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Non-Inverting Independent Low-Side N-Channel MOSFET - 2V,4.25V 4A,4A
MAX17603AUA+
Maxim Integrated
390
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8UMAX
Tube - 4 V ~ 14 V 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Inverting Independent Low-Side N-Channel MOSFET - 2V,4.25V 4A,4A
MAX17602ASA+
Maxim Integrated
288
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8SOIC
Tube - 4 V ~ 14 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting Independent Low-Side N-Channel MOSFET - 0.8V,2.1V 4A,4A
MAX17605AUA+
Maxim Integrated
118
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8UMAX
Tube - 4 V ~ 14 V 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Inverting,Non-Inverting Independent Low-Side IGBT,SiC MOSFET - 2V,4.25V 4A,4A