- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 71
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
4,652
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO263
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Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 30A，30A | ||
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IXYS Integrated Circuits Division |
1,427
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO220
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Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 30A，30A | ||
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IXYS Integrated Circuits Division |
1,249
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER LOW SIDE TO-263-5
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Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 30A，30A | ||
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IXYS-RF |
3,907
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR RF 30A HI DCB
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Tube | - | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD，Flat Lead Exposed Pad | - | - | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 4ns，4ns | 30A，30A | ||
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IXYS-RF |
672
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR RF 30A LOW DCB
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Tube | - | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD，Flat Lead Exposed Pad | - | - | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 4ns，4ns | 30A，30A | ||
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IXYS Integrated Circuits Division |
695
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO263
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Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 30A，30A | ||
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IXYS-RF |
132
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3 jours |
-
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MOQ: 1 MPQ: 1
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15A，15V MOSFET DRIVER
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Tube | - | 8 V ~ 18 V | -40°C ~ 85°C | 6-SMD，Flat Leads | 6-SMD | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 4ns，4ns | 15A，15A | ||
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IXYS-RF |
60
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3 jours |
-
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MOQ: 1 MPQ: 1
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15A DUAL MOSFET DRIVER
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Tube | - | 8 V ~ 18 V | -40°C ~ 85°C | 8-SMD，Flat Lead | 8-SMD | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 4ns，4ns | 15A，15A | ||
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IXYS-RF |
79
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3 jours |
-
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MOQ: 1 MPQ: 1
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500V 18A INTEGRATED POWER MOSFET
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Tube | - | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 10-SMD，Flat Lead | 10-SMD | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 500V | 3.4ns，1.65ns | 95A，95A | ||
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IXYS-RF |
90
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3 jours |
-
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MOQ: 1 MPQ: 1
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15A LOW SIDE MOSFET DRIVER IN SM
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Tube | - | 8 V ~ 18 V | -40°C ~ 85°C | 16-SMD | - | Surface Mount | Non-Inverting | Single | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 4ns，4ns | 15A，15A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO263
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Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 30A，30A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
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Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 30A，30A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
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Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 30A，30A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER LS 8A SGL 8-DIP
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Tube | - | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 14ns，15ns | 8A，8A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 94 MPQ: 1
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IC MOSFET DRIVER LS 8A SGL 8SOIC
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Tube | - | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 14ns，15ns | 8A，8A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
|
IC MOSFET DRVR LS 8A SGL 5TO-263
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Tube | - | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 14ns，15ns | 8A，8A | ||
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IXYS |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
IC MOSFET DRIVER LS 14A SGL 8DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 14A，14A | ||
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IXYS |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
IC MOSFET DRVR LS 14A SGL 5TO263
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 14A，14A | ||
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IXYS |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
IC MOSFET/IGBT DRIVER TO-263
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Bulk | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 18ns，16ns | 30A，30A | ||
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IXYS |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
IC HIGH CURR GATE DRVR 9A TO-263
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 10ns，10ns | 9A，9A |
