Fabricant:
Voltage - Supply:
Supplier Device Package:
Channel Type:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 18
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MC33883HEGR2
NXP USA Inc.
10,000
3 jours
-
MOQ: 1000  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20SOIC
Tape & Reel (TR) - 5.5 V ~ 28 V -40°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 55V 0.8V,2V 1A,1A
MC33883HEGR2
NXP USA Inc.
11,423
3 jours
-
MOQ: 1  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20SOIC
Cut Tape (CT) - 5.5 V ~ 28 V -40°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 55V 0.8V,2V 1A,1A
MC33883HEGR2
NXP USA Inc.
11,423
3 jours
-
MOQ: 1  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20SOIC
- - 5.5 V ~ 28 V -40°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 55V 0.8V,2V 1A,1A
AUIRS2123STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH SIDE 600V 8SOIC
Tape & Reel (TR) Automotive,AEC-Q100 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V - 500mA,500mA
AUIRS2124STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH SIDE 600V 8SOIC
Tape & Reel (TR) Automotive,AEC-Q100 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V - 500mA,500mA
MC33883DWR2
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20-SOIC
Tape & Reel (TR) - 5.5 V ~ 28 V -40°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 55V 0.8V,2V 1A,1A
MC33883DWR2
NXP USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20-SOIC
Cut Tape (CT) - 5.5 V ~ 28 V -40°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 55V 0.8V,2V 1A,1A
IRS2123STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HI SIDE 600V 500MA 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V - 500mA,500mA
IRS2123STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR HI SIDE 600V 500MA 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V - 500mA,500mA
IRS2123STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR HI SIDE 600V 500MA 8-SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V - 500mA,500mA
IRS2124STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HI SIDE 600V 500MA 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V - 500mA,500mA
IRS2124STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR HI SIDE 600V 500MA 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V - 500mA,500mA
IRS2124STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR HI SIDE 600V 500MA 8-SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V - 500mA,500mA
IRS2123SPBF
Infineon Technologies
Enquête
-
-
MOQ: 380  MPQ: 1
IC DVR HIGH SIDE 600V 8SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V - 500mA,500mA
IRS2124SPBF
Infineon Technologies
Enquête
-
-
MOQ: 380  MPQ: 1
IC DVR HIGH SIDE 600V 8SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V - 500mA,500mA
AUIRS2123S
Infineon Technologies
Enquête
-
-
MOQ: 475  MPQ: 1
IC DRIVER HIGH SIDE 600V 8SOIC
Tube Automotive,AEC-Q100 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V - 500mA,500mA
AUIRS2124S
Infineon Technologies
Enquête
-
-
MOQ: 380  MPQ: 1
IC DRIVER HIGH SIDE 600V 8SOIC
Tube Automotive,AEC-Q100 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V - 500mA,500mA
MC33883DW
NXP USA Inc.
Enquête
-
-
MOQ: 38  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20-SOIC
Tube - 5.5 V ~ 28 V -40°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 55V 0.8V,2V 1A,1A