- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 24
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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|
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ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
|
Tape & Reel (TR) | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | ||
|
|
|
ON Semiconductor |
8,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
|
Cut Tape (CT) | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | ||
|
|
|
ON Semiconductor |
8,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER VR12.5 QFN
|
Tape & Reel (TR) | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | ||
|
|
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
Tape & Reel (TR) | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
9,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
Cut Tape (CT) | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
9,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
6,401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-SOIC
|
Cut Tape (CT) | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
6,401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-SOIC
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
Tape & Reel (TR) | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
3,840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
Cut Tape (CT) | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
3,840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
5,501
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
|
Cut Tape (CT) | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
5,501
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
|
- | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
2,446
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-SOIC
|
Cut Tape (CT) | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
2,446
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-SOIC
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR DUAL 5V 16QFN
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (2.5x3.5) | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | 35V | 16ns，11ns | - |
