- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 108
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
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Infineon Technologies |
2,354
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，3V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
1,141
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
1,141
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.2V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
1,494
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
Tape & Reel (TR) | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
1,380
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
Cut Tape (CT) | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
1,380
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
- | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
1,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，40ns | 0.8V，2.2V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,004
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
1,010
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
1,010
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA |
