- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 157
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Tape & Reel (TR) | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 21ns，18ns | 0.8V，1V | 3A，4A | ||
|
|
|
Infineon Technologies |
5,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Cut Tape (CT) | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 21ns，18ns | 0.8V，1V | 3A，4A | ||
|
|
|
Infineon Technologies |
5,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
- | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 21ns，18ns | 0.8V，1V | 3A，4A | ||
|
|
|
Renesas Electronics America Inc. |
2,401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC BUCK 10-DFN
|
Tube | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 8ns，8ns | - | -，4A | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | 2.5A，2.5A | ||
|
|
|
Monolithic Power Systems Inc. |
4,687
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER
|
Cut Tape (CT) | - | - | 10-QFN (3x3) | - | - | - | - | - | - | - | - | - | ||
|
|
|
Monolithic Power Systems Inc. |
4,687
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER
|
- | - | - | 10-QFN (3x3) | - | - | - | - | - | - | - | - | - | ||
|
|
|
Renesas Electronics America Inc. |
875
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC RECT MOSFET DRVR 10-DFN
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 8ns，8ns | - | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
597
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC RECT MOSFET DRVR 10-DFN
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 8ns，8ns | - | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC DRIVER MOSFET SYNC BUCK 10DFN
|
Tape & Reel (TR) | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
|
|
|
Renesas Electronics America Inc. |
10,503
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SYNC BUCK 10DFN
|
Cut Tape (CT) | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
|
|
|
Renesas Electronics America Inc. |
10,503
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SYNC BUCK 10DFN
|
- | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 10-DFN
|
Tape & Reel (TR) | 6.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
|
|
|
Renesas Electronics America Inc. |
15,806
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 10-DFN
|
Cut Tape (CT) | 6.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
|
|
|
Renesas Electronics America Inc. |
15,806
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 10-DFN
|
- | 6.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
|
|
|
Renesas Electronics America Inc. |
127
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC HF 6A 10-DFN
|
Tube | 6.8 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 13ns，10ns | - | 2.5A，4A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DRIVER 10DFN
|
Tape & Reel (TR) | 4.5 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | - | - | 3A，4A | ||
|
|
|
Infineon Technologies |
2,700
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DRIVER 10DFN
|
Cut Tape (CT) | 4.5 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | - | - | 3A，4A | ||
|
|
|
Infineon Technologies |
2,700
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DRIVER 10DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | - | - | 3A，4A | ||
|
|
|
Renesas Electronics America Inc. |
333
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC BUCK 10-DFN
|
Tube | 6.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A |
