- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 211
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Diodes Incorporated |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 8.9ns，8.9ns | - | ||
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|
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Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 8.9ns，8.9ns | - | ||
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|
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Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 8.9ns，8.9ns | - | ||
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Texas Instruments |
24,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
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|
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Texas Instruments |
25,232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
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Texas Instruments |
25,232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
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Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
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|
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Texas Instruments |
18,225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
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|
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Texas Instruments |
18,225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
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- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
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|
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Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR LOW SIDE DL 8MSOP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
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|
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Texas Instruments |
18,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE DL 8MSOP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
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|
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Texas Instruments |
18,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE DL 8MSOP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
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ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | ||
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|
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ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | ||
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ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | ||
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|
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ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | ||
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|
|
ON Semiconductor |
2,589
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | ||
|
|
|
ON Semiconductor |
2,589
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | ||
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|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8SOIC
|
Tape & Reel (TR) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 5.3ns，4.5ns | - | ||
|
|
|
Infineon Technologies |
4,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8SOIC
|
Cut Tape (CT) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 5.3ns，4.5ns | - |
