Fabricant:
Découvrez les produits 12
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
DGD0506AM10-13
Diodes Incorporated
Enquête
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-
MOQ: 2500  MPQ: 1
IC GATE HV DRIVER MSOP-10
Tape & Reel (TR) 8 V ~ 14 V -40°C ~ 125°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP CMOS/TTL Synchronous Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V
DGD0506AM10-13
Diodes Incorporated
2,158
3 jours
-
MOQ: 1  MPQ: 1
IC GATE HV DRIVER MSOP-10
Cut Tape (CT) 8 V ~ 14 V -40°C ~ 125°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP CMOS/TTL Synchronous Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V
DGD0506AM10-13
Diodes Incorporated
2,158
3 jours
-
MOQ: 1  MPQ: 1
IC GATE HV DRIVER MSOP-10
- 8 V ~ 14 V -40°C ~ 125°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP CMOS/TTL Synchronous Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V
DGD0506AFN-7
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Tape & Reel (TR) 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 CMOS/TTL Synchronous Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V
DGD0506AFN-7
Diodes Incorporated
2,553
3 jours
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Cut Tape (CT) 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 CMOS/TTL Synchronous Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V
DGD0506AFN-7
Diodes Incorporated
2,553
3 jours
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
- 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 CMOS/TTL Synchronous Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V
DGD0507AFN-7
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Tape & Reel (TR) 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 CMOS/TTL Synchronous Half-Bridge 2 N-Channel MOSFET 50V 16ns,18ns 0.8V,2.4V
DGD0507AFN-7
Diodes Incorporated
2,845
3 jours
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Cut Tape (CT) 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 CMOS/TTL Synchronous Half-Bridge 2 N-Channel MOSFET 50V 16ns,18ns 0.8V,2.4V
DGD0507AFN-7
Diodes Incorporated
2,845
3 jours
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
- 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 CMOS/TTL Synchronous Half-Bridge 2 N-Channel MOSFET 50V 16ns,18ns 0.8V,2.4V
FAN3181TMX
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC LOW SIDE IGBT DRIVER 8SOIC
Tape & Reel (TR) 25V (Max) -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single Low-Side 1 IGBT - 15ns,10ns 0.8V,2V
FAN3181TMX
ON Semiconductor
2,416
3 jours
-
MOQ: 1  MPQ: 1
IC LOW SIDE IGBT DRIVER 8SOIC
Cut Tape (CT) 25V (Max) -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single Low-Side 1 IGBT - 15ns,10ns 0.8V,2V
FAN3181TMX
ON Semiconductor
2,416
3 jours
-
MOQ: 1  MPQ: 1
IC LOW SIDE IGBT DRIVER 8SOIC
- 25V (Max) -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single Low-Side 1 IGBT - 15ns,10ns 0.8V,2V