- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 21
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Tape & Reel (TR) | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 16ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
3,076
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Cut Tape (CT) | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 16ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
3,076
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 16ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TA) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,553
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Cut Tape (CT) | 8 V ~ 14 V | -40°C ~ 125°C (TA) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,553
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TA) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TA) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 16ns，18ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Cut Tape (CT) | 8 V ~ 14 V | -40°C ~ 125°C (TA) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 16ns，18ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TA) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 16ns，18ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,647
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,647
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 150°C (TJ) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 1V，2.5V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
1,524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Cut Tape (CT) | 8 V ~ 14 V | -40°C ~ 150°C (TJ) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 1V，2.5V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
1,524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
- | 8 V ~ 14 V | -40°C ~ 150°C (TJ) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 1V，2.5V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 150°C (TJ) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 17ns，13ns | 1V，2.5V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
2,991
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Cut Tape (CT) | 8 V ~ 14 V | -40°C ~ 150°C (TJ) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 17ns，13ns | 1V，2.5V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
2,991
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
- | 8 V ~ 14 V | -40°C ~ 150°C (TJ) | CMOS/TTL | Synchronous | N-Channel MOSFET | 50V | 17ns，13ns | 1V，2.5V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA |
