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- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 7,777
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
11,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
8,526
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
2,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA | ||||
Texas Instruments |
2,876
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Infineon Technologies |
3,476
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 25ns,15ns | 0.8V,2.7V | 1A,1A | ||||
Infineon Technologies |
1,309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA | ||||
Infineon Technologies |
1,038
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 15ns,10ns | 0.8V,2.7V | 2.3A,3.3A | ||||
Infineon Technologies |
4,355
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Texas Instruments |
3,669
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS FET DRIVER 8-SOIC
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A | ||||
Infineon Technologies |
2,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8DIP
|
Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Infineon Technologies |
2,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA | ||||
Infineon Technologies |
1,680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL SELF OSC 14-SOIC
|
Tube | - | 10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 600V | 120ns,50ns | 4.7V,9.3V | 180mA,260mA | ||||
Microchip Technology |
1,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF HI/LOW SIDE 8SOIC
|
Tube | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V,2V | - | ||||
Texas Instruments |
3,794
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-DIP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Maxim Integrated |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
6,638
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
6,638
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Texas Instruments |
3,908
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,886
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-MSOP
|
Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,236
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A |