- Packaging：
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- Series：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 20
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
700V GATE DRIVER
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TA) | 8-SOIC | - | Synchronous | High-Side or Low-Side | IGBT，N-Channel，P-Channel MOSFET | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
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Texas Instruments |
3,084
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
Cut Tape (CT) | - | -40°C ~ 125°C (TA) | 8-SOIC | - | Synchronous | High-Side or Low-Side | IGBT，N-Channel，P-Channel MOSFET | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
3,084
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
- | - | -40°C ~ 125°C (TA) | 8-SOIC | - | Synchronous | High-Side or Low-Side | IGBT，N-Channel，P-Channel MOSFET | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
UCC27712QDRQ1
|
Tape & Reel (TR) | Automotive，AEC-Q100 | -40°C ~ 125°C (TA) | 8-SOIC | - | Synchronous | High-Side or Low-Side | IGBT，N-Channel，P-Channel MOSFET | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
Cut Tape (CT) | Automotive，AEC-Q100 | -40°C ~ 125°C (TA) | 8-SOIC | - | Synchronous | High-Side or Low-Side | IGBT，N-Channel，P-Channel MOSFET | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
- | Automotive，AEC-Q100 | -40°C ~ 125°C (TA) | 8-SOIC | - | Synchronous | High-Side or Low-Side | IGBT，N-Channel，P-Channel MOSFET | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
Tube | Automotive，AEC-Q100 | -40°C ~ 125°C (TA) | 8-SOIC | - | Synchronous | High-Side or Low-Side | IGBT，N-Channel，P-Channel MOSFET | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
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|
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Infineon Technologies |
2,261
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
|
|
|
Infineon Technologies |
2,261
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,413
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | IGBT，N-Channel MOSFET | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
1,026
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | IGBT，N-Channel MOSFET | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
1,026
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | IGBT，N-Channel MOSFET | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Texas Instruments |
903
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
620-V，1.8-A，2.8-A HIGH-SIDE LO
|
Tube | - | -40°C ~ 125°C (TA) | 8-SOIC | - | Synchronous | High-Side or Low-Side | IGBT，N-Channel，P-Channel MOSFET | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC MOSFET IGBT 20V
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
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|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC MOSFET IGBT 20V
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 150ns，50ns | - | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC MOSFET IGBT
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | Synchronous | Half-Bridge | IGBT，N-Channel MOSFET | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A |
