- Fabricant:
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- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 1,823
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Diodes Incorporated |
21,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8.9ns,8.9ns | - | 5A,5A | ||||
Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8.9ns,8.9ns | - | 5A,5A | ||||
Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8.9ns,8.9ns | - | 5A,5A | ||||
Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
33,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 13.4ns,12.4ns | - | 8A,8A | ||||
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 13.4ns,12.4ns | - | 8A,8A | ||||
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 13.4ns,12.4ns | - | 8A,8A | ||||
Infineon Technologies |
15,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
Tape & Reel (TR) | μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 25ns,25ns | 0.8V,2.5V | 1.5A,1.5A | ||||
Infineon Technologies |
15,397
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
Cut Tape (CT) | μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 25ns,25ns | 0.8V,2.5V | 1.5A,1.5A | ||||
Infineon Technologies |
15,397
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
- | μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 25ns,25ns | 0.8V,2.5V | 1.5A,1.5A | ||||
Diodes Incorporated |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
Tape & Reel (TR) | - | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 450ns,21ns | - | 2.5A,6A | ||||
Diodes Incorporated |
5,330
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
Cut Tape (CT) | - | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 450ns,21ns | - | 2.5A,6A | ||||
Diodes Incorporated |
5,330
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
- | - | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 450ns,21ns | - | 2.5A,6A | ||||
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 70ns,30ns | 1V,3.6V | 250mA,500mA | ||||
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 70ns,30ns | 1V,3.6V | 250mA,500mA |