- Voltage - Supply:
-
- Operating Temperature:
-
- Supplier Device Package:
-
- Channel Type:
-
- Driven Configuration:
-
- Gate Type:
-
- High Side Voltage - Max (Bootstrap):
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 215
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 3A,3A | ||||
Texas Instruments |
51,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF 1A 8WSON
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 0.8V,2.2V | 1A,1A | ||||
Texas Instruments |
51,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF 1A 8WSON
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 0.8V,2.2V | 1A,1A | ||||
Texas Instruments |
51,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF 1A 8WSON
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 0.8V,2.2V | 1A,1A | ||||
Texas Instruments |
36,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8WSON
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 0.8V,2.2V | 1A,1A | ||||
Texas Instruments |
36,650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8WSON
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 0.8V,2.2V | 1A,1A | ||||
Texas Instruments |
36,650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8WSON
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 0.8V,2.2V | 1A,1A | ||||
Texas Instruments |
24,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Texas Instruments |
25,232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Texas Instruments |
25,232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Texas Instruments |
13,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8WSON
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 15ns,15ns | 0.8V,2.2V | 1.3A,1.4A | ||||
Texas Instruments |
14,058
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8WSON
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 15ns,15ns | 0.8V,2.2V | 1.3A,1.4A | ||||
Texas Instruments |
14,058
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8WSON
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 15ns,15ns | 0.8V,2.2V | 1.3A,1.4A | ||||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
4,110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
4,110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
18,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
18,976
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A |