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- Conditions sélectionnées:
Découvrez les produits 7,777
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
8,182
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
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IXYS Integrated Circuits Division |
2,946
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-DIP
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER N-BRIDGE 24SSOP
|
Tape & Reel (TR) | - | 7 V ~ 34 V | -40°C ~ 150°C (TJ) | 24-LSSOP (0.154"，3.90mm Width) Exposed Pad | PG-SSOP-24 | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 55V | 250ns，200ns | 1V，2V | - | ||
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Infineon Technologies |
4,322
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER N-BRIDGE 24SSOP
|
Cut Tape (CT) | - | 7 V ~ 34 V | -40°C ~ 150°C (TJ) | 24-LSSOP (0.154"，3.90mm Width) Exposed Pad | PG-SSOP-24 | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 55V | 250ns，200ns | 1V，2V | - | ||
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Infineon Technologies |
4,322
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER N-BRIDGE 24SSOP
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- | - | 7 V ~ 34 V | -40°C ~ 150°C (TJ) | 24-LSSOP (0.154"，3.90mm Width) Exposed Pad | PG-SSOP-24 | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 55V | 250ns，200ns | 1V，2V | - | ||
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Infineon Technologies |
2,498
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE SELF OSC 8DIP
|
Tube | - | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
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Texas Instruments |
12,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 8SOPWR
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Tape & Reel (TR) | Automotive，AEC-Q100 | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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Texas Instruments |
16,709
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Cut Tape (CT) | Automotive，AEC-Q100 | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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Texas Instruments |
16,709
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
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- | Automotive，AEC-Q100 | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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IXYS Integrated Circuits Division |
2,092
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A INV 8-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
1,461
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL NONINV 8DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm)，6 Leads | 8-DIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
1,002
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DIFF 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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Texas Instruments |
3,966
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 5A 8-SOIC
|
Tube | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
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Texas Instruments |
1,373
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 5A 8-SOIC
|
Tube | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
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Maxim Integrated |
1,316
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
Tube | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
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Texas Instruments |
1,510
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
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Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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|
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Infineon Technologies |
2,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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|
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Infineon Technologies |
2,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Texas Instruments |
2,858
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8-SOIC
|
Tube | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | - |
