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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 7,777
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Power Integrations |
70
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINGLE GATE DRIVER 35A
|
Bulk | SCALE-2 | 23.5 V ~ 26.5 V | -40°C ~ 85°C (TA) | Module | Module | Surface Mount | - | Single | High-Side or Low-Side | 1 | IGBT | 6500V | 9ns,30ns | - | 35A,35A | ||||
Power Integrations |
34
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINGLE GATE DRIVER 35A
|
Bulk | SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | Module | Module | Surface Mount | - | Single | High-Side or Low-Side | 1 | IGBT | 3300V | 9ns,30ns | - | 35A,35A | ||||
Diodes Incorporated |
12,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | 6-TSSOP,SC-88,SOT-363 | SOT-363 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns,240ns | - | 2A,2A | ||||
Diodes Incorporated |
14,341
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | 6-TSSOP,SC-88,SOT-363 | SOT-363 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns,240ns | - | 2A,2A | ||||
Diodes Incorporated |
14,341
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | 6-TSSOP,SC-88,SOT-363 | SOT-363 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns,240ns | - | 2A,2A | ||||
Diodes Incorporated |
27,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns,240ns | - | 2A,2A | ||||
Diodes Incorporated |
28,160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns,240ns | - | 2A,2A | ||||
Diodes Incorporated |
28,160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns,240ns | - | 2A,2A | ||||
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns,11ns | 0.7V,3.4V | - | ||||
ON Semiconductor |
8,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
|
Cut Tape (CT) | - | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns,11ns | 0.7V,3.4V | - | ||||
ON Semiconductor |
8,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
|
- | - | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns,11ns | 0.7V,3.4V | - | ||||
Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8.3ns,10.8ns | - | 9A,9A | ||||
Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8.3ns,10.8ns | - | 9A,9A | ||||
Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8.3ns,10.8ns | - | 9A,9A | ||||
ON Semiconductor |
75,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
76,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
76,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 0.8V,2V | 3A,3A | ||||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
Tape & Reel (TR) | μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 100V | 85ns,40ns | 0.8V,2.2V | 160mA,240mA | ||||
Infineon Technologies |
4,783
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
Cut Tape (CT) | μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 100V | 85ns,40ns | 0.8V,2.2V | 160mA,240mA | ||||
Infineon Technologies |
4,783
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
- | μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 100V | 85ns,40ns | 0.8V,2.2V | 160mA,240mA |