Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Conditions sélectionnées:
Découvrez les produits 7,777
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ICL7667CPAZ
Renesas Electronics America Inc.
409
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER DUAL HS 8DIP
Tube - 4.5 V ~ 15 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent High-Side or Low-Side 2 N-Channel MOSFET - 20ns,20ns 0.8V,2V -
IR2110SPBF
Infineon Technologies
8,823
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tube - 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 6V,9.5V 2A,2A
LTC7004EMSE#PBF
Linear Technology/Analog Devices
605
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HIGH-SIDE 10MSOP
Tube - 60V (Max) -40°C ~ 125°C (TJ) 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad 10-MSOP Surface Mount Non-Inverting Single High-Side 1 N-Channel MOSFET 80V 90ns,40ns - -
EL7457CLZ
Renesas Electronics America Inc.
4,780
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER CMOS QUAD 40MHZ 16QFN
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-VQFN Exposed Pad 16-QFN (4x4) Surface Mount Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CUZ
Renesas Electronics America Inc.
2,986
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CMOS QUAD 40MHZ 16-QSOP
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-SSOP (0.154",3.90mm Width) 16-QSOP Surface Mount Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
IXDD614CI
IXYS Integrated Circuits Division
2,677
3 jours
-
MOQ: 1  MPQ: 1
MOSFET N-CH 14A LO SIDE TO-220-5
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 25ns,18ns 0.8V,3V 14A,14A
HIP4081AIPZ
Renesas Electronics America Inc.
1,614
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER FET FULL BRIDGE 20DIP
Tube - 9.5 V ~ 15 V -40°C ~ 125°C (TJ) 20-DIP (0.300",7.62mm) 20-PDIP Through Hole Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 95V 10ns,10ns 1V,2.5V 2.6A,2.4A
MAX1614EUA+
Maxim Integrated
3,423
3 jours
-
MOQ: 1  MPQ: 1
IC DVR MOSFET HI-SIDE NCH 8-UMAX
Tube - 5 V ~ 26 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) 8-uMAX Surface Mount Non-Inverting Single High-Side 1 N-Channel MOSFET - - 0.6V,2V -
EL7156CSZ
Renesas Electronics America Inc.
4,042
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER PIN 40MHZ 3STATE 8SOIC
Tube - 4.5 V ~ 16.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side or Low-Side 1 IGBT - 14.5ns,15ns 0.8V,2.4V 3.5A,3.5A
EL7155CSZ
Renesas Electronics America Inc.
2,579
3 jours
-
MOQ: 1  MPQ: 1
IC DVR PIN 40MHZ 3STATE 8-SOIC
Tube - 4.5 V ~ 16.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous High-Side or Low-Side 2 IGBT - 14.5ns,15ns 0.8V,2.4V 3.5A,3.5A
IR2213SPBF
Infineon Technologies
1,784
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tube - 12 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 1200V 25ns,17ns 6V,9.5V 2A,2.5A
IR2130STRPBF
Infineon Technologies
2,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IR2130STRPBF
Infineon Technologies
2,088
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IR2130STRPBF
Infineon Technologies
2,088
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IR2213PBF
Infineon Technologies
1,697
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14-DIP
Tube - 12 V ~ 20 V -55°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 1200V 25ns,17ns 6V,9.5V 2A,2.5A
EL7158ISZ
Renesas Electronics America Inc.
7,703
3 jours
-
MOQ: 1  MPQ: 1
IC DVR PIN 40MHZ 3STATE 8-SOIC
Tube - 4.5 V ~ 12 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side or Low-Side 1 IGBT - 12ns,12.2ns 0.8V,2.4V 12A,12A
IXDD630YI
IXYS Integrated Circuits Division
4,652
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER LOW SIDE 5TO263
Tube - 12.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263-5 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 11ns,11ns 0.8V,3.5V 30A,30A
IXDN630CI
IXYS Integrated Circuits Division
1,427
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER LOW SIDE 5TO220
Tube - 12.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 11ns,11ns 0.8V,3.5V 30A,30A
IXDD630MYI
IXYS Integrated Circuits Division
1,249
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER LOW SIDE TO-263-5
Tube - 9 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263-5 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 11ns,11ns 0.8V,3.5V 30A,30A
UC3710T
Texas Instruments
5,125
3 jours
-
MOQ: 1  MPQ: 1
IC COMPL MOSFET DRVR TO-220-5
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 85ns,85ns 0.8V,2V 6A,6A