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- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 7,777
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
11,887
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
11,887
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
Tape & Reel (TR) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 25ns,25ns | 0.8V,2.5V | 2.3A,3.3A | ||||
Infineon Technologies |
9,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
Cut Tape (CT) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 25ns,25ns | 0.8V,2.5V | 2.3A,3.3A | ||||
Infineon Technologies |
9,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
- | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 25ns,25ns | 0.8V,2.5V | 2.3A,3.3A | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
10,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
10,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.5V | 290mA,600mA | ||||
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRVR SYNC 8WSON
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 34V | 30ns,8ns | 0.6V,2.65V | - | ||||
Texas Instruments |
6,116
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC 8WSON
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 34V | 30ns,8ns | 0.6V,2.65V | - | ||||
Texas Instruments |
6,116
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC 8WSON
|
- | - | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 34V | 30ns,8ns | 0.6V,2.65V | - | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Tape & Reel (TR) | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Cut Tape (CT) | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.5V | 290mA,600mA | ||||
Texas Instruments |
7,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL 5A 8-EMSOP
|
Tape & Reel (TR) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns,12ns | 0.8V,2.2V | 3A,5A | ||||
Texas Instruments |
11,538
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 5A 8-EMSOP
|
Cut Tape (CT) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns,12ns | 0.8V,2.2V | 3A,5A |