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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 7,777
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HV GATE DRIVER MSOP-10 T&R 2.5K
|
Tape & Reel (TR) | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | Surface Mount | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2.5A | |||
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HV GATE DRIVER QFN3030-16 T&R 3K
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HV GATE DRIVER SO-8 T&R 2.5K
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HV GATE DRIVER W-DFN3030-10 T&R
|
Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
LEVEL SHIFT JUNCTION ISO
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HV GATE DRIVER SO-8 T&R 2.5K
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HV GATE DRIVER SO-8 T&R 2.5K
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
3 AMP，DUAL INVERTING，LOW-SIDE
|
Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
3 AMP，DUAL NON-INVERTING，LOW-S
|
Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
3 AMP，DUAL，ONE INVERTING AND O
|
Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
HVIC
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HVIC
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
100V，4A，HIGH FREQUENCY HALF-BR
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
100V，4A，HIGH FREQUENCY HALF-BR
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH CURRENT IGBT GATE DR
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH CURRENT IGBT GATE DR
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH CURRENT IGBT GATE DR
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16VQFN
|
Tape & Reel (TR) | - | 5 V ~ 10 V | -20°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.3V，1.7V | 2A，2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16VQFN
|
Tape & Reel (TR) | - | 5 V ~ 10 V | -20°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.3V，1.7V | 2A，2A |
