Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Conditions sélectionnées:
Découvrez les produits 7,777
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
2SB315B-FF800R17KF6
Power Integrations
Enquête
-
-
MOQ: 0  MPQ: 1
MOD GATE DVR FF800R17KF6
- - - - - - - - - - - - - - - -
2SB315B-FF800R17KP4_B2
Power Integrations
Enquête
-
-
MOQ: 0  MPQ: 1
MOD GATE DVR FF800R17KP4_B2
- - - - - - - - - - - - - - - -
DGD2103S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
MAX5048AAUT#G16
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRIVER HS
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C SOT-23-6 SOT-23-6 Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns - 1.3A,7.6A
MAX5048BAUT#G16
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRIVER HS
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C SOT-23-6 SOT-23-6 Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 0.8V,2.4V 1.3A,7.6A
TSC426C/D
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC POWER MANAGEMENT
Bulk - 4.5 V ~ 18 V 0°C ~ 70°C Die Die Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 1.5A,1.5A
RT7027GS
Richtek USA Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC HALF-BRIDGE GATE DRVR SOP8
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOP Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
RT7028AGS
Richtek USA Inc.
Enquête
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-
MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH SOP8
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOP Surface Mount Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
RT7028BGS
Richtek USA Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH SOP8
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOP Surface Mount Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
RT7027GN
Richtek USA Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC HALF-BRIDGE GATE DRVR DIP8
Tube - 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
RT7028AGN
Richtek USA Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH DIP8
Tube - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-DIP (0.300",7.62mm) 8-DIP Through Hole Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
RT7028BGN
Richtek USA Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH DIP8
Tube - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-DIP (0.300",7.62mm) 8-DIP Through Hole Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
RT7021AGN
Richtek USA Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH DIP8
Tube - 13 V ~ 20 V -40°C ~ 125°C (TA) 8-DIP (0.300",7.62mm) 8-DIP Through Hole Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
RT7021BGN
Richtek USA Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH DIP8
Tube - 13 V ~ 20 V -40°C ~ 125°C (TA) 8-DIP (0.300",7.62mm) 8-DIP Through Hole Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
MAX8552ETB+TG069
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
INTEGRATED CIRCUIT
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MAX8552ETB+TG24
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
INTEGRATED CIRCUIT
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MAX8552EUB+TGC1
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
INTEGRATED CIRCUIT
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MAX4427ESA+TG002
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
INTEGRATED CIRCUIT
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MAX4427ESA+TGA7
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
INTEGRATED CIRCUIT
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