Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Conditions sélectionnées:
Découvrez les produits 7,777
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAQ4123YME-TRVAO
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
Cut Tape (CT) Automotive,AEC-Q100 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4123YME-TRVAO
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
- Automotive,AEC-Q100 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4125YME-TRVAO
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
Cut Tape (CT) Automotive,AEC-Q100 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4125YME-TRVAO
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
- Automotive,AEC-Q100 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4124YME-TRVAO
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
Cut Tape (CT) Automotive,AEC-Q100 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4124YME-TRVAO
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
- Automotive,AEC-Q100 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 11ns,11ns 0.8V,2.4V 3A,3A
TSC428EPA
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR DUAL PWR DIP
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-DIP (0.300",7.62mm) 8-DIP Through Hole Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 1.5A,1.5A
LM2722MX
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER HI SPD 8-SOIC
Tape & Reel (TR) - 4 V ~ 7 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET - 17ns,12ns 0.8V,2.4V 3A,3.2A
L6743B
STMicroelectronics
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DRIVER HI CURR 8VFDFPN
Tray - 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-VFDFN Exposed Pad 8-VFDFPN (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 41V - 0.8V,2V 2A,-
L6747A
STMicroelectronics
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DRVR 8-VFDFPN
Tray - 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-VFDFN Exposed Pad 8-VFDFPN (3x3) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 41V - 0.8V,2V 3.5A,-
FAN3122CMX-F085
ON Semiconductor
Enquête
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-
MOQ: 2500  MPQ: 1
IC GATE DVR SGL 9A HS 8SOIC
Tape & Reel (TR) Automotive,AEC-Q100 4.5 V ~ 18 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel MOSFET - 23ns,19ns - 10.6A,11.4A
IX2204NE
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
IC IGBT GATE DVR DUAL 16SOIC
Tube - -10 V ~ 25 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Independent Low-Side 2 IGBT - -,8ns 0.8V,2V 2A,4A
IX2204NETR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC IGBT GATE DVR DUAL 16SOIC
Tape & Reel (TR) - -10 V ~ 25 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Independent Low-Side 2 IGBT - -,8ns 0.8V,2V 2A,4A
NCP5901BEMNTBG
ON Semiconductor
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET DVR SYNC VR12 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 13.2 V 0°C ~ 150°C (TJ) 8-VFDFN Exposed Pad 8-DFN (2x2) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 16ns,11ns 0.7V,3.4V -
NCP5901EMNTBG
ON Semiconductor
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET DVR SYNC VR12 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 13.2 V 0°C ~ 150°C (TJ) 8-VFDFN Exposed Pad 8-DFN (2x2) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 16ns,11ns 0.7V,3.4V -
MAX4426MJA/883B
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Through Hole Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
MAX4429MJA/883B
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Through Hole Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 6A,6A
MAX4427MJA/883B
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Through Hole Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
MAX626MJA/883B
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Through Hole Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 0.8V,2.4V 2A,2A
MAX627MJA/883B
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Through Hole Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 0.8V,2.4V 2A,2A