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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 7,777
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
8,938
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14MLPQ
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-VFQFN Exposed Pad | 14-MLPQ (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，30ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
8,938
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14MLPQ
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-VFQFN Exposed Pad | 14-MLPQ (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，30ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
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Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR SELF-OSC HALF BRG 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
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|
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Infineon Technologies |
6,903
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR SELF-OSC HALF BRG 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
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|
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Infineon Technologies |
6,903
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR SELF-OSC HALF BRG 8-SOIC
|
- | - | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
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|
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8SOIC
|
Tape & Reel (TR) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
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|
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Infineon Technologies |
4,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8SOIC
|
Cut Tape (CT) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
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|
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Infineon Technologies |
4,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8SOIC
|
- | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | 180mA，260mA | ||
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|
|
Infineon Technologies |
4,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | 180mA，260mA | ||
|
|
|
Infineon Technologies |
4,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8SOIC
|
- | - | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | 180mA，260mA | ||
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Texas Instruments |
17,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR DUAL 5A NEG VOUT 10WSON
|
Tape & Reel (TR) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
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Texas Instruments |
19,081
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR DUAL 5A NEG VOUT 10WSON
|
Cut Tape (CT) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
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Texas Instruments |
19,081
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR DUAL 5A NEG VOUT 10WSON
|
- | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
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ON Semiconductor |
18,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
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|
|
ON Semiconductor |
18,976
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
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|
|
ON Semiconductor |
18,976
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
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|
|
Texas Instruments |
2,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DUAL MOSFET DRIVER 8-TSSOP
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | Surface Mount | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
6,376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL MOSFET DRIVER 8-TSSOP
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | Surface Mount | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
6,376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL MOSFET DRIVER 8-TSSOP
|
- | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | Surface Mount | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A |
