Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Conditions sélectionnées:
Découvrez les produits 7,777
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
UCC27324DGNR
Texas Instruments
25,000
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8MSOP
Tape & Reel (TR) - 4.5 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27324DGNR
Texas Instruments
31,646
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8MSOP
Cut Tape (CT) - 4.5 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27324DGNR
Texas Instruments
31,646
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8MSOP
- - 4.5 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27531DBVR
Texas Instruments
9,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,2.2V 2.5A,5A
UCC27531DBVR
Texas Instruments
11,022
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,2.2V 2.5A,5A
UCC27531DBVR
Texas Instruments
11,022
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,2.2V 2.5A,5A
TPS2819DBVR
Texas Instruments
6,000
3 jours
-
MOQ: 3000  MPQ: 1
IC NONINVERT FET DRVR SOT-23-5
Tape & Reel (TR) - 4 V ~ 14 V -40°C ~ 125°C (TA) SC-74A,SOT-753 SOT-23-5 Surface Mount Non-Inverting Single Low-Side 1 N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A
TPS2819DBVR
Texas Instruments
13,767
3 jours
-
MOQ: 1  MPQ: 1
IC NONINVERT FET DRVR SOT-23-5
Cut Tape (CT) - 4 V ~ 14 V -40°C ~ 125°C (TA) SC-74A,SOT-753 SOT-23-5 Surface Mount Non-Inverting Single Low-Side 1 N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A
TPS2819DBVR
Texas Instruments
13,767
3 jours
-
MOQ: 1  MPQ: 1
IC NONINVERT FET DRVR SOT-23-5
- - 4 V ~ 14 V -40°C ~ 125°C (TA) SC-74A,SOT-753 SOT-23-5 Surface Mount Non-Inverting Single Low-Side 1 N-Channel MOSFET - 14ns,14ns 1V,4V 2A,2A
UCC27324DR
Texas Instruments
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27324DR
Texas Instruments
7,348
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8SOIC
Cut Tape (CT) - 4.5 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27324DR
Texas Instruments
7,348
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8SOIC
- - 4.5 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27424DGNR
Texas Instruments
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8MSOP
Tape & Reel (TR) - 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27424DGNR
Texas Instruments
4,767
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8MSOP
Cut Tape (CT) - 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27424DGNR
Texas Instruments
4,767
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8MSOP
- - 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
IRS21867STRPBF
Infineon Technologies
17,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 22ns,18ns 0.8V,2.5V 4A,4A
IRS21867STRPBF
Infineon Technologies
19,926
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 22ns,18ns 0.8V,2.5V 4A,4A
IRS21867STRPBF
Infineon Technologies
19,926
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 22ns,18ns 0.8V,2.5V 4A,4A
IR2101STRPBF
Infineon Technologies
12,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA
IR2101STRPBF
Infineon Technologies
12,806
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA