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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 4,388
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Cut Tape (CT) | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Texas Instruments |
7,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL 5A 8-EMSOP
|
Tape & Reel (TR) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
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|
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Texas Instruments |
11,538
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 5A 8-EMSOP
|
Cut Tape (CT) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
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|
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Texas Instruments |
11,538
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 5A 8-EMSOP
|
- | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
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|
|
IXYS Integrated Circuits Division |
4,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
4,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
|
Cut Tape (CT) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
4,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
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- | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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|
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Texas Instruments |
24,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
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Texas Instruments |
25,232
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
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Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
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Texas Instruments |
25,232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
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- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
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Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
|
Texas Instruments |
18,225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
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Texas Instruments |
18,225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
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Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR LOW SIDE DL 8MSOP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
18,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE DL 8MSOP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
18,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE DL 8MSOP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
6,895
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
6,895
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA |
