- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 84
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
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Infineon Technologies |
15,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
Tape & Reel (TR) | μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | - | 25ns，25ns | 0.8V，2.5V | 1.5A，1.5A | ||
|
|
|
Infineon Technologies |
15,397
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
Cut Tape (CT) | μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | - | 25ns，25ns | 0.8V，2.5V | 1.5A，1.5A | ||
|
|
|
Infineon Technologies |
15,397
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
- | μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | - | 25ns，25ns | 0.8V，2.5V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC NONINVERT FET DRVR SOT-23-5
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
13,767
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NONINVERT FET DRVR SOT-23-5
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
13,767
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NONINVERT FET DRVR SOT-23-5
|
- | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5L
|
Tape & Reel (TR) | μHVIC | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | - | 85ns，40ns | 0.6V，2.7V | 300mA，550mA | ||
|
|
|
Infineon Technologies |
4,788
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5L
|
Cut Tape (CT) | μHVIC | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | - | 85ns，40ns | 0.6V，2.7V | 300mA，550mA | ||
|
|
|
Infineon Technologies |
4,788
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5L
|
- | μHVIC | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | - | 85ns，40ns | 0.6V，2.7V | 300mA，550mA | ||
|
|
|
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRV SGL TTL 2A SOT23-5
|
Tape & Reel (TR) | - | 5 V ~ 18 V | -40°C ~ 125°C (TJ) | Low-Side | N-Channel MOSFET | - | 19ns，13ns | 0.8V，2V | 2.5A，2.8A | ||
|
|
|
ON Semiconductor |
5,984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRV SGL TTL 2A SOT23-5
|
Cut Tape (CT) | - | 5 V ~ 18 V | -40°C ~ 125°C (TJ) | Low-Side | N-Channel MOSFET | - | 19ns，13ns | 0.8V，2V | 2.5A，2.8A | ||
|
|
|
ON Semiconductor |
5,984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRV SGL TTL 2A SOT23-5
|
- | - | 5 V ~ 18 V | -40°C ~ 125°C (TJ) | Low-Side | N-Channel MOSFET | - | 19ns，13ns | 0.8V，2V | 2.5A，2.8A | ||
|
|
|
Texas Instruments |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
11,736
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
11,736
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC HS MOSFET DRIVER SOT-23-5
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
4,373
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HS MOSFET DRIVER SOT-23-5
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
4,373
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HS MOSFET DRIVER SOT-23-5
|
- | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Low-Side | N-Channel MOSFET | - | 14ns，14ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
Tape & Reel (TR) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
7,237
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
Cut Tape (CT) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A |
