Supplier Device Package:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 59
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
EL7457CSZ-T7
Renesas Electronics America Inc.
4,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER QUAD HS NON-INV 16SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-SOIC Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CSZ-T7
Renesas Electronics America Inc.
4,498
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER QUAD HS NON-INV 16SOIC
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-SOIC Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CSZ-T7
Renesas Electronics America Inc.
4,498
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER QUAD HS NON-INV 16SOIC
- - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-SOIC Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
L6390DTR
STMicroelectronics
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HV HI/LOW SIDE 16SO
Tape & Reel (TR) - 12.5 V ~ 20 V -40°C ~ 150°C (TJ) 16-SO Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
L6390DTR
STMicroelectronics
3,711
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HV HI/LOW SIDE 16SO
Cut Tape (CT) - 12.5 V ~ 20 V -40°C ~ 150°C (TJ) 16-SO Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
L6390DTR
STMicroelectronics
3,711
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HV HI/LOW SIDE 16SO
- - 12.5 V ~ 20 V -40°C ~ 150°C (TJ) 16-SO Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
HIP4082IBZ
Renesas Electronics America Inc.
918
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER FET H-BRIDGE 16SOIC
Tube - 8.5 V ~ 15 V -55°C ~ 150°C (TJ) 16-SOIC Independent Half-Bridge 4 N-Channel MOSFET 95V 9ns,9ns 1V,2.5V 1.4A,1.3A
EL7457CSZ
Renesas Electronics America Inc.
882
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CMOS QUAD 40MHZ 16-SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-SOIC Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
L6390D
STMicroelectronics
543
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HV HI/LOW SIDE 16SO
Tube - 12.5 V ~ 20 V -40°C ~ 150°C (TJ) 16-SO Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
2EDF7275FXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
DRIVER IC
Tape & Reel (TR) EiceDriver 3 V ~ 3.5 V -40°C ~ 150°C (TJ) PG-DSO-16-11 Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,2V 4A,8A
2EDF7275FXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) EiceDriver 3 V ~ 3.5 V -40°C ~ 150°C (TJ) PG-DSO-16-11 Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,2V 4A,8A
2EDF7275FXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
DRIVER IC
- EiceDriver 3 V ~ 3.5 V -40°C ~ 150°C (TJ) PG-DSO-16-11 Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,2V 4A,8A
UC3715DTR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC COMP SW FET DRVR 16-SOIC
Tape & Reel (TR) - 7 V ~ 20 V 0°C ~ 150°C (TJ) 16-SOIC Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V 500mA,1A
AUIRS2191STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tape & Reel (TR) Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.8V,2.5V 3.5A,3.5A
HIP4082IBZT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 5000  MPQ: 1
IC DRIVER FET H-BRDG 80V 16-SOIC
Tape & Reel (TR) - 8.5 V ~ 15 V -55°C ~ 150°C (TJ) 16-SOIC Independent Half-Bridge 4 N-Channel MOSFET 95V 9ns,9ns 1V,2.5V 1.4A,1.3A
HIP4082IBZTR5676
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER FET H-BRDG 80V 16SOIC
Tape & Reel (TR) - 8.5 V ~ 15 V -55°C ~ 150°C (TJ) 16-SO Independent Half-Bridge 4 N-Channel MOSFET 95V 9ns,9ns 1V,2.5V 1.4A,1.3A
EL7457CSZ-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-SOIC Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
UC2715DP
Texas Instruments
Enquête
-
-
MOQ: 200  MPQ: 1
IC COMP SW FET DRVR 16-SOIC
Tube - 7 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V 500mA,1A
EL7457CSZ-T7A
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 250  MPQ: 1
IC DVR CMOS 40MHZ QUAD 16SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 16-SOIC Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
UC3714DP
Texas Instruments
Enquête
-
-
MOQ: 240  MPQ: 1
IC COMPLEMNT SW FET DRVR 16-SOIC
Tube - 7 V ~ 20 V 0°C ~ 150°C (TJ) 16-SOIC Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V 500mA,1A