- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 59
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
4,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER QUAD HS NON-INV 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC | Independent | High-Side or Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 13.5ns,13ns | 0.8V,2V | 2A,2A | ||||
Renesas Electronics America Inc. |
4,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER QUAD HS NON-INV 16SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC | Independent | High-Side or Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 13.5ns,13ns | 0.8V,2V | 2A,2A | ||||
Renesas Electronics America Inc. |
4,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER QUAD HS NON-INV 16SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC | Independent | High-Side or Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 13.5ns,13ns | 0.8V,2V | 2A,2A | ||||
STMicroelectronics |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HV HI/LOW SIDE 16SO
|
Tape & Reel (TR) | - | 12.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SO | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 1.1V,1.9V | 290mA,430mA | ||||
STMicroelectronics |
3,711
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HV HI/LOW SIDE 16SO
|
Cut Tape (CT) | - | 12.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SO | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 1.1V,1.9V | 290mA,430mA | ||||
STMicroelectronics |
3,711
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HV HI/LOW SIDE 16SO
|
- | - | 12.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SO | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 1.1V,1.9V | 290mA,430mA | ||||
Renesas Electronics America Inc. |
918
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET H-BRIDGE 16SOIC
|
Tube | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-SOIC | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns,9ns | 1V,2.5V | 1.4A,1.3A | ||||
Renesas Electronics America Inc. |
882
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CMOS QUAD 40MHZ 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC | Independent | High-Side or Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 13.5ns,13ns | 0.8V,2V | 2A,2A | ||||
STMicroelectronics |
543
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HV HI/LOW SIDE 16SO
|
Tube | - | 12.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SO | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 1.1V,1.9V | 290mA,430mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
DRIVER IC
|
Tape & Reel (TR) | EiceDriver | 3 V ~ 3.5 V | -40°C ~ 150°C (TJ) | PG-DSO-16-11 | Independent | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | - | 6.5ns,4.5ns | 1.2V,2V | 4A,8A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
Cut Tape (CT) | EiceDriver | 3 V ~ 3.5 V | -40°C ~ 150°C (TJ) | PG-DSO-16-11 | Independent | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | - | 6.5ns,4.5ns | 1.2V,2V | 4A,8A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
- | EiceDriver | 3 V ~ 3.5 V | -40°C ~ 150°C (TJ) | PG-DSO-16-11 | Independent | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | - | 6.5ns,4.5ns | 1.2V,2V | 4A,8A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC COMP SW FET DRVR 16-SOIC
|
Tape & Reel (TR) | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 16-SOIC | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 30ns,25ns | 0.8V,2V | 500mA,1A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.8V,2.5V | 3.5A,3.5A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC DRIVER FET H-BRDG 80V 16-SOIC
|
Tape & Reel (TR) | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-SOIC | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns,9ns | 1V,2.5V | 1.4A,1.3A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER FET H-BRDG 80V 16SOIC
|
Tape & Reel (TR) | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-SO | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns,9ns | 1V,2.5V | 1.4A,1.3A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER QUAD 40MHZ HS 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC | Independent | High-Side or Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 13.5ns,13ns | 0.8V,2V | 2A,2A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC COMP SW FET DRVR 16-SOIC
|
Tube | - | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 30ns,25ns | 0.8V,2V | 500mA,1A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DVR CMOS 40MHZ QUAD 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC | Independent | High-Side or Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 13.5ns,13ns | 0.8V,2V | 2A,2A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC COMPLEMNT SW FET DRVR 16-SOIC
|
Tube | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 16-SOIC | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 30ns,25ns | 0.8V,2V | 500mA,1A |