- Voltage - Supply：
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- Operating Temperature：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 32
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
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IXYS Integrated Circuits Division |
2,677
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N-CH 14A LO SIDE TO-220-5
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 25ns，18ns | 0.8V，3V | 14A，14A | ||
|
|
|
IXYS Integrated Circuits Division |
1,427
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
|
|
|
IXYS Integrated Circuits Division |
631
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO220-5
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | 9A，9A | ||
|
|
Microchip Technology |
845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A NON-INV TO220-5
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | 10A，10A | |||
|
|
Microchip Technology |
791
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVR MOSF 12A LOSIDE TO220-5
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | IGBT，N-Channel MOSFET | 20ns，24ns | 0.8V，2.4V | 12A，12A | |||
|
|
Microchip Technology |
133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LS TO-220-5
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 20ns，24ns | 0.8V，2.4V | 9A，9A | |||
|
|
Microchip Technology |
218
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 9A N-INV TO220-5
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 60ns，60ns | 0.8V，2.4V | 9A，9A | |||
|
|
Microchip Technology |
111
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 6A TO220-5
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
178
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A LS TO-220-5
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | N-Channel，P-Channel MOSFET | 12ns，13ns | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
79
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 12A HS TO220-5
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 30ns，32ns | 0.8V，2.4V | 13A，13A | |||
|
|
Microchip Technology |
240
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A HS TO220-5
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC DRIVER MOSFET 9A LS TO220-5
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | N-Channel MOSFET | 20ns，24ns | 0.8V，3V | 9A，9A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC MOSFET DRIVER 6A HS TO220-5
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC MOSFET DRVR 9A N-INV TO220-5
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 60ns，60ns | 0.8V，2.4V | 9A，9A | |||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR LS 8A SGL 5TO-220
|
Tube | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 14ns，15ns | 0.8V，3.5V | 8A，8A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRV LS 14A SGL 5TO-220
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 25ns，22ns | 0.8V，3.5V | 14A，14A | ||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC DRIVR MOSF 12A LOSIDE TO220-5
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | IGBT，N-Channel MOSFET | 20ns，24ns | 0.8V，2.4V | 12A，12A |
