- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 18
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Diodes Incorporated |
21,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Low-Side | IGBT，SiC MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Low-Side | IGBT，SiC MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Low-Side | IGBT，SiC MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Low-Side | IGBT，SiC MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Low-Side | IGBT，SiC MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Low-Side | IGBT，SiC MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive，AEC-Q101 | 25V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Low-Side | IGBT，N-Channel MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive，AEC-Q101 | 25V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Low-Side | IGBT，N-Channel MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR IGBT/MOSFET SOT26
|
- | Automotive，AEC-Q101 | 25V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Low-Side | IGBT，N-Channel MOSFET | 48ns，35ns | - | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC BUFFER GATE DRVR 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 13 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | High-Side or Low-Side | IGBT | 50ns，50ns | - | ||
|
|
Microchip Technology |
1,530
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A NON-INV 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
743
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A NON-INV 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
377
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A NON-INV 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A NON-INV TO220-5
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRVR 9A N-INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
2,670
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 9A N-INV 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
2,670
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 9A N-INV 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRVR 9A N-INV 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V |
