- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 9
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1200 MPQ: 1
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IC DRVR HALF BRIDGE 100V 16-QFN
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- | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
|
IC DRVR MOSF 2CH SYC BUCK 16-QFN
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- | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 15V | 20ns,20ns | - | - | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
|
IC DRVR MOSF 2CH SYC BUCK 16-QFN
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- | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 15V | 20ns,20ns | - | - | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1125 MPQ: 1
|
IC DRIVER MOSF SYNC BUCK 16-QFN
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- | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 15V | 20ns,20ns | - | - | ||||
IXYS |
Enquête
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- |
-
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MOQ: 224 MPQ: 1
|
IC GATE DRIVER 14A LO SIDE 6-DFN
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- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,22ns | 1V,2.5V | 14A,14A | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
|
IC PREDRIVER QUAD LOSIDE 32-LQFP
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Automotive,AEC-Q100,FLEXMOS | 4.75 V ~ 5.25 V | -40°C ~ 150°C (TJ) | 32-LQFP | 32-LQFP (7x7) | Independent | Low-Side | 4 | N-Channel MOSFET | - | 1.4μs,1.4μs (Max) | 0.8V,2V | - | ||||
Microchip Technology |
529
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 100V CMOS 8SOIC
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- | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 10ns,6ns | 3V,8V | 2A,3A | ||||
STMicroelectronics |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC MOSFET DVR N-CH DUAL 8-VFDFPN
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- | 5 V ~ 12 V | 0°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad | 8-VFDFPN (3x3) | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 41V | - | 0.8V,2V | 3.5A,- | ||||
STMicroelectronics |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC MOSFET DRIVER HI CURR 8VFDFPN
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- | 5 V ~ 12 V | 0°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad | 8-VFDFPN (3x3) | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 41V | - | 0.8V,2V | 2A,- |