- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 18
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Maxim Integrated |
1,316
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
Tube | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Low-Side | - | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
437
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tube | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Independent | Low-Side | - | 32ns,26ns | 4A,4A | ||||
Maxim Integrated |
129
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tube | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Low-Side | - | 32ns,26ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Independent | Low-Side | - | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
1,390
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Independent | Low-Side | - | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
1,390
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
- | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Independent | Low-Side | - | 40ns,25ns | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Synchronous | Half-Bridge | 33V | 10ns,10ns | 2A,2A | ||||
Texas Instruments |
4,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Synchronous | Half-Bridge | 33V | 10ns,10ns | 2A,2A | ||||
Texas Instruments |
4,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SOIC
|
- | Automotive,AEC-Q100 | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Synchronous | Half-Bridge | 33V | 10ns,10ns | 2A,2A | ||||
Maxim Integrated |
20
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
Tube | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-uMax-EP | Independent | Low-Side | - | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-uMax-EP | Independent | Low-Side | - | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Low-Side | - | 40ns,25ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Low-Side | - | 32ns,26ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Independent | Low-Side | - | 32ns,26ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tube | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Independent | Low-Side | - | 32ns,26ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DVR 4A 20NS DUAL 8SOIC
|
Tape & Reel (TR) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Independent | Low-Side | - | 32ns,26ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tube | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Low-Side | - | 32ns,26ns | 4A,4A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Low-Side | - | 32ns,26ns | 4A,4A |