- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 22
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
42,000
|
3 jours |
-
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MOQ: 2000 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
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Tape & Reel (TR) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
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Cut Tape (CT) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
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- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
8,000
|
3 jours |
-
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MOQ: 2000 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
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Tape & Reel (TR) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
9,070
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
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Cut Tape (CT) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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IXYS Integrated Circuits Division |
9,070
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
2,094
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR NOTEBOOK
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Tape & Reel (TR) | 4.2 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-WQFN Exposed Pad | 8-TQFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 24V | - | 2A，2.7A | ||
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Maxim Integrated |
5,167
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR NOTEBOOK
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Cut Tape (CT) | 4.2 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-WQFN Exposed Pad | 8-TQFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 24V | - | 2A，2.7A | ||
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Maxim Integrated |
5,167
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR NOTEBOOK
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- | 4.2 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-WQFN Exposed Pad | 8-TQFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 24V | - | 2A，2.7A | ||
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Maxim Integrated |
780
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR NOTEBOOK
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Tube | 4.2 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-WQFN Exposed Pad | 8-TQFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 24V | - | 2A，2.7A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSF DRIVER 1PH SYNCH 8TQFN
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Tape & Reel (TR) | 4.2 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-WQFN Exposed Pad | 8-TQFN-EP | Synchronous | Half-Bridge | N-Channel MOSFET | - | - | 2.2A，2.7A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER 8-TQFN
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Tape & Reel (TR) | 4.2 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-WQFN Exposed Pad | 8-TQFN-EP | Synchronous | Half-Bridge | N-Channel MOSFET | - | - | 2.2A，2.7A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSF DRIVER 1PH SYNCH 8TQFN
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Tube | 4.2 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-WQFN Exposed Pad | 8-TQFN-EP | Synchronous | Half-Bridge | N-Channel MOSFET | - | - | 2.2A，2.7A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DRIVER 8-TQFN
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Tube | 4.2 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-WQFN Exposed Pad | 8-TQFN-EP | Synchronous | Half-Bridge | N-Channel MOSFET | - | - | 2.2A，2.7A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC GATE DRVR HI/LOW SIDE 10DFN
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Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HI/LOW SIDE 10DFN
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Cut Tape (CT) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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- | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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Cut Tape (CT) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 0.8V，1V | 2A，2A |
