- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 61
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | - | 5A，5A | ||
|
|
|
Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | - | 5A，5A | ||
|
|
|
Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | - | 5A，5A | ||
|
|
|
Diodes Incorporated |
33,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | - | 8A，8A | ||
|
|
|
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | - | 8A，8A | ||
|
|
|
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | - | 8A，8A | ||
|
|
|
Texas Instruments |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
11,022
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
11,022
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
7,000
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
7,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
7,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | - | 9A，9A | ||
|
|
|
Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | - | 9A，9A | ||
|
|
|
Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | - | 9A，9A | ||
|
|
|
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
Tape & Reel (TR) | μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | High-Side | N-Channel MOSFET | 100V | 85ns，40ns | 0.8V，2.2V | 160mA，240mA | ||
|
|
|
Infineon Technologies |
4,783
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
Cut Tape (CT) | μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | High-Side | N-Channel MOSFET | 100V | 85ns，40ns | 0.8V，2.2V | 160mA，240mA | ||
|
|
|
Infineon Technologies |
4,783
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
- | μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | High-Side | N-Channel MOSFET | 100V | 85ns，40ns | 0.8V，2.2V | 160mA，240mA | ||
|
|
|
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
Tape & Reel (TR) | μHVIC | 10 V ~ 18 V | -55°C ~ 150°C (TJ) | SOT-23-6 | High-Side | N-Channel MOSFET | 600V | 85ns，40ns | - | 160mA，240mA | ||
|
|
|
Infineon Technologies |
3,470
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
Cut Tape (CT) | μHVIC | 10 V ~ 18 V | -55°C ~ 150°C (TJ) | SOT-23-6 | High-Side | N-Channel MOSFET | 600V | 85ns，40ns | - | 160mA，240mA |
