Fabricant:
Packaging:
Series:
Voltage - Supply:
Supplier Device Package:
Channel Type:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 5
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Channel Type Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
6ED003L06C2X1SA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR 3-PH 600V DIE
Bulk EiceDriver 13 V ~ 17.5 V -40°C ~ 125°C (TJ) Chip 3-Phase 6 IGBT 600V 60ns,26ns 1.1V,1.7V -
6EDL04I06NCX1SA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR 3-PH 600V DIE
Bulk EiceDriver 13 V ~ 17.5 V -40°C ~ 125°C (TJ) Chip 3-Phase 6 IGBT 600V 60ns,26ns 1.1V,1.7V -
6EDL04I06PCX1SA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR 3-PH 600V DIE
Bulk EiceDriver 13 V ~ 17.5 V -40°C ~ 125°C (TJ) Chip 3-Phase 6 IGBT 600V 60ns,26ns 1.1V,1.7V -
6EDL04N06PCX1SA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR 3-PH 600V DIE
Bulk EiceDriver 13 V ~ 17.5 V -40°C ~ 125°C (TJ) Chip 3-Phase 6 IGBT 600V 60ns,26ns 1.1V,1.7V -
UCC27201ATDA2
Texas Instruments
Enquête
-
-
MOQ: 20  MPQ: 1
IC DVR HIGH/LOW SIDE 3A DIE
Tube - 8 V ~ 17 V -40°C ~ 140°C (TJ) Die Independent 2 N-Channel MOSFET 120V 8ns,7ns 0.8V,2.5V 3A,3A