- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 49
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Powerex Inc. |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR FOR IGBT MOD
|
- | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module，12 Leads | Module | Through Hole | Single | Low-Side | 1 | IGBT | - | 500ns，300ns | - | 2A，2A | ||
|
|
|
Powerex Inc. |
2,246
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DVR/DC-DC CONV 12A
|
- | 14.2 V ~ 15.8 V | -20°C ~ 60°C (TA) | 21-SIP Module | Module | Through Hole | Single | Low-Side | 1 | IGBT | - | 300ns，300ns | - | 12A，12A | ||
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|
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Texas Instruments |
225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOIC
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
|
|
|
Texas Instruments |
121
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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|
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Texas Instruments |
3,780
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
|
|
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Renesas Electronics America Inc. |
771
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR SNGL 8-DIP
|
- | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
1,719
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Powerex Inc. |
6,224
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DRIVER INV/AC SERVO
|
- | 14 V ~ 17 V | -20°C ~ 70°C (TA) | 14-SIP Module，12 Leads | Module | Through Hole | Single | Low-Side | 1 | IGBT | - | 400ns，300ns | - | 5A，5A | ||
|
|
|
Powerex Inc. |
541
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DVR ISO 5A
|
- | 14.2 V ~ 15.8 V | -20°C ~ 70°C (TA) | 44-DIP Module，28 Leads | Module | Through Hole | Independent | Half-Bridge | 2 | IGBT | - | 400ns，300ns | - | - | ||
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|
|
Powerex Inc. |
48
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DVR ISO 3A
|
- | 14 V ~ 17 V | -20°C ~ 70°C (TA) | 14-SIP Module，12 Leads | Module | Through Hole | Single | Low-Side | 1 | IGBT | - | 300ns，300ns | - | 3A，3A | ||
|
|
|
Powerex Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DVR/DC-DC CONV 12A
|
- | 14.2 V ~ 15.8 V | -20°C ~ 60°C (TA) | 21-SIP Module | Module | Through Hole | Single | Low-Side | 1 | IGBT | - | 300ns，300ns | - | 12A，12A | ||
|
|
|
Powerex Inc. |
Enquête
|
- |
-
|
MOQ: 23 MPQ: 1
|
IC GATE DRVR FOR IGBT MOD
|
- | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module，12 Leads | Module | Through Hole | Single | Low-Side | 1 | IGBT | - | 600ns，400ns | - | 5A，5A | ||
|
|
|
Powerex Inc. |
Enquête
|
- |
-
|
MOQ: 21 MPQ: 1
|
IC GATE DRVR FOR IGBT MOD
|
- | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module，12 Leads | Module | Through Hole | Single | Low-Side | 1 | IGBT | - | 500ns，400ns | - | 5A，5A | ||
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|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET/IGBT DRIVER TO-263
|
- | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 18ns，16ns | 0.8V，3.5V | 30A，30A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 276 MPQ: 1
|
IC DRVR HALF BRIDGE 2A 16-SOIC
|
- | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 8ns，7ns | 6V，9.6V | 2A，2A | ||
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|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 230 MPQ: 1
|
IC DRVR HALF BRIDGE 4A 16-SOIC
|
- | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 650V | 23ns，22ns | 6V，7V | 4A，4A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 368 MPQ: 1
|
IC DRIVER HALF BRDG 600MA 16-SOI
|
- | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 650V | 23ns，22ns | 6V，7V | 600mA，600mA | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 470 MPQ: 1
|
IC DRVR HALF BRIDGE 600MA 8-SOIC
|
- | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 28ns，18ns | 2.4V，2.7V | 600mA，600mA | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 424 MPQ: 1
|
IC DRVR HALF BRIDGE 600MA 14SOIC
|
- | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 28ns，18ns | 2.4V，2.7V | 600mA，600mA | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
- | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 18ns，16ns | 0.8V，3.5V | 30A，30A |
