- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 61
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
240,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
Tape & Reel (TR) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 15ns，10ns | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
241,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
Cut Tape (CT) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 15ns，10ns | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
241,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
- | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 15ns，10ns | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
11,287
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
11,287
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
6,636
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
6,636
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
6,862
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
6,862
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
1,038
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 15ns，10ns | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
2,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8DIP
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 15ns，10ns | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
1,169
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
427
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
1,924
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
3,800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL MOSFET IGBT 8SO
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 15ns，10ns | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
269
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
1,092
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A |
