Découvrez les produits 31
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IRS23364DSTRPBF
Infineon Technologies
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC GATE DRIVER HV 3PHASE 28-SOIC
Tape & Reel (TR) - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IRS23364DSTRPBF
Infineon Technologies
1,380
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HV 3PHASE 28-SOIC
Cut Tape (CT) - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IRS23364DSTRPBF
Infineon Technologies
1,380
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HV 3PHASE 28-SOIC
- - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
FAN73895MX
ON Semiconductor
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR HALF BRDG 3PH 28SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
FAN73895MX
ON Semiconductor
1,010
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRDG 3PH 28SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
FAN73895MX
ON Semiconductor
1,010
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRDG 3PH 28SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
IR21364STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28-SOIC
Tape & Reel (TR) - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IR21364STRPBF
Infineon Technologies
995
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28-SOIC
Cut Tape (CT) - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IR21364STRPBF
Infineon Technologies
995
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28-SOIC
- - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
FAN7389MX1
ON Semiconductor
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR HALF BRDG 3CH 28SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
FAN7389MX1
ON Semiconductor
40
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRDG 3CH 28SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
FAN7389MX1
ON Semiconductor
40
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRDG 3CH 28SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
IX2120BTR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
1200V HIGH AND LOW SIDE GATE DRI
Tape & Reel (TR) - 15 V ~ 20 V -40°C ~ 150°C (TJ) Independent Half-Bridge 2 IGBT,N-Channel MOSFET 1200V 9.4ns,9.7ns 6V,9.5V 2A,2A
IX2120BTR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1  MPQ: 1
1200V HIGH AND LOW SIDE GATE DRI
Cut Tape (CT) - 15 V ~ 20 V -40°C ~ 150°C (TJ) Independent Half-Bridge 2 IGBT,N-Channel MOSFET 1200V 9.4ns,9.7ns 6V,9.5V 2A,2A
IX2120BTR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1  MPQ: 1
1200V HIGH AND LOW SIDE GATE DRI
- - 15 V ~ 20 V -40°C ~ 150°C (TJ) Independent Half-Bridge 2 IGBT,N-Channel MOSFET 1200V 9.4ns,9.7ns 6V,9.5V 2A,2A
FAN73896MX
ON Semiconductor
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR HALF BRDG 3PH 28SOIC
Tape & Reel (TR) - 12 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
FAN73896MX
ON Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRDG 3PH 28SOIC
Cut Tape (CT) - 12 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
FAN73896MX
ON Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRDG 3PH 28SOIC
- - 12 V ~ 20 V -40°C ~ 150°C (TJ) 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
AUIRS20302STR
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRIVE AUTOMOTIVE 28SOIC
Tape & Reel (TR) Automotive,AEC-Q100 24 V ~ 150 V -40°C ~ 125°C (TA) 3-Phase Half-Bridge 6 N-Channel MOSFET 200V 100ns,35ns 0.7V,2.5V 200mA,350mA
AUIRS20302STR
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DRIVE AUTOMOTIVE 28SOIC
Cut Tape (CT) Automotive,AEC-Q100 24 V ~ 150 V -40°C ~ 125°C (TA) 3-Phase Half-Bridge 6 N-Channel MOSFET 200V 100ns,35ns 0.7V,2.5V 200mA,350mA