- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
-
- Supplier Device Package:
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- Mounting Type:
-
- Rise / Fall Time (Typ):
-
- Conditions sélectionnées:
Découvrez les produits 18
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Gate Type | Rise / Fall Time (Typ) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Gate Type | Rise / Fall Time (Typ) | ||
IXYS Integrated Circuits Division |
4,652
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | ||||
IXYS Integrated Circuits Division |
1,427
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | ||||
IXYS Integrated Circuits Division |
1,249
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE TO-263-5
|
Tube | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | ||||
IXYS-RF |
3,907
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR RF 30A HI DCB
|
Tube | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD,Flat Lead Exposed Pad | - | - | N-Channel,P-Channel MOSFET | 4ns,4ns | ||||
IXYS-RF |
672
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR RF 30A LOW DCB
|
Tube | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD,Flat Lead Exposed Pad | - | - | N-Channel,P-Channel MOSFET | 4ns,4ns | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET/IGBT DRIVER TO-263
|
Bulk | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
Bulk | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
Bulk | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
Tube | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO220-5
|
Bulk | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO220-5
|
Bulk | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO220-5
|
Tube | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO220-5
|
Bulk | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns |