- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 108
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 70ns,30ns | 1V,3.6V | ||||
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 70ns,30ns | 1V,3.6V | ||||
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 70ns,30ns | 1V,3.6V | ||||
Infineon Technologies |
22,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,3V | ||||
Infineon Technologies |
23,326
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,3V | ||||
Infineon Technologies |
23,326
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
- | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,3V | ||||
Infineon Technologies |
1,860
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR CURR SENSE 8SOIC
|
Tube | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,3V | ||||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOP
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 70ns,30ns | 0.8V,2.9V | ||||
ON Semiconductor |
5,950
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOP
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 70ns,30ns | 0.8V,2.9V | ||||
ON Semiconductor |
5,950
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOP
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 70ns,30ns | 0.8V,2.9V | ||||
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | ||||
Infineon Technologies |
11,376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | ||||
Infineon Technologies |
11,376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | ||||
Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | ||||
Infineon Technologies |
2,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | ||||
Infineon Technologies |
2,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | ||||
Infineon Technologies |
2,399
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH SIDE DRIVER SGL 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | ||||
Infineon Technologies |
2,122
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | ||||
Infineon Technologies |
1,434
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 14-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | ||||
Infineon Technologies |
602
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V |