- Voltage - Supply：
-
- Operating Temperature：
-
- Channel Type：
-
- Driven Configuration：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 20
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
IXYS Integrated Circuits Division |
2,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
|
|
|
IXYS Integrated Circuits Division |
1,461
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL NONINV 8DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm)，6 Leads | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
|
|
|
IXYS Integrated Circuits Division |
1,719
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DVR ULT FAST 14A 8-DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
|
|
|
IXYS Integrated Circuits Division |
149
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N-CH 2A DUAL LO SIDE 8-DI
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
|
|
|
IXYS Integrated Circuits Division |
581
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL ENABLE 8DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC HIGH SIDE DRIVER 8DIP
|
9 V ~ 12 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 23ns，20ns | 0.8V，3V | 250mA，500mA | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 8 PIN DIP NON INVERTING
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
|
|
|
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRIVER GATE IGBT/MOSFET 8DIP
|
12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
|
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2800 MPQ: 1
|
IC PWM HIGH-SIDE SWITCH 8-DIP
|
25V (Max) | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Single | High-Side | 1 | N-Channel MOSFET | - | - | - | - | ||
|
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2800 MPQ: 1
|
IC PWM HIGH-SIDE SWITCH 8-DIP
|
25V (Max) | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Single | High-Side | 1 | N-Channel MOSFET | - | - | - | - | ||
|
|
|
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC IGBT/MOSFET DRIVER ADV 8-DIP
|
12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8-DIP
|
15 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.2V，2.9V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HI/LO SIDE 8-DIP
|
10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | 4.5A，4.5A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HI LO SIDE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 60ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
|
|
|
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC HI-SIDE MOSFET SWITCH DIP8
|
10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | Independent | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
|
|
|
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC HI-SIDE MOSFET SWITCH DIP8
|
10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | Independent | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
|
|
|
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC HI-SIDE MOSFET SWITCH DIP8
|
13 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | Independent | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
|
|
|
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC HI-SIDE MOSFET SWITCH DIP8
|
13 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | Independent | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
|
|
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR DIP8
|
10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA |
