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- Packaging：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 4,388
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
51,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF 1A 8WSON
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-WSON (4x4) | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
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|
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Texas Instruments |
51,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF 1A 8WSON
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-WSON (4x4) | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
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|
|
Texas Instruments |
51,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF 1A 8WSON
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-WSON (4x4) | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
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|
|
Texas Instruments |
36,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8WSON
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-WSON (4x4) | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
36,650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8WSON
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-WSON (4x4) | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
36,650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8WSON
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-WSON (4x4) | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
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|
|
ON Semiconductor |
15,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HISIDE 2CH 14-SOP
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Surface Mount | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.3V，2.5V | 350mA，650mA | ||
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|
|
ON Semiconductor |
17,977
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HISIDE 2CH 14-SOP
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Surface Mount | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.3V，2.5V | 350mA，650mA | ||
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|
|
ON Semiconductor |
17,977
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HISIDE 2CH 14-SOP
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Surface Mount | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.3V，2.5V | 350mA，650mA | ||
|
|
|
Texas Instruments |
27,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRVR 5A DUAL LOSIDE 8SOIC
|
Tape & Reel (TR) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
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|
|
Texas Instruments |
28,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRVR 5A DUAL LOSIDE 8SOIC
|
Cut Tape (CT) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
|
|
|
Texas Instruments |
28,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRVR 5A DUAL LOSIDE 8SOIC
|
- | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
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|
|
STMicroelectronics |
25,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC IGBT/MOSFET DRIVER ADV 8-SOIC
|
Tape & Reel (TR) | - | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
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|
|
STMicroelectronics |
26,196
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT/MOSFET DRIVER ADV 8-SOIC
|
Cut Tape (CT) | - | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
|
|
|
STMicroelectronics |
26,196
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT/MOSFET DRIVER ADV 8-SOIC
|
- | - | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
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|
|
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | 2A，2A | ||
|
|
|
Texas Instruments |
9,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | 2A，2A | ||
|
|
|
Texas Instruments |
9,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | 2A，2A | ||
|
|
|
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
12,190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA |
